IXTK200N10P Discrete Semiconductor Products

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The IXTK200N10P is a part of the IXTK family of Field-Effect Transistors (FETs). The name stands for “Integrated Circuit Technology” and is an acronym for the power MOSFETs manufactured by IXYS Corporation. The IXTK200N10P is a N-channel MOSFET with a 10A Gate drain voltage.

The IXTK200N10P offers excellent switching performance and is suitable for a wide range of applications, such as switch-mode power supplies (SMPS), motor drives and DC-DC converters. It is rated at 10A in continuous current and has a maximum drain-source voltage of 200V. With its low gate charge, the IXTK200N10P provides fast switching speeds, making it suitable for high frequency/high current applications.

The IXTK200N10P works on the principle of a field-effect transistor. In a MOSFET, current flows through the device by the action of an electric field. This voltage is created by an electric potential between the drain and source contacts of the transistor. The gate contact of the transistor acts as a reverse-biased diode, controlling the width of the depletion layer across the drain-source region. By varying the voltage of the gate, the width of the depletion layer can be changed, which in turn changes the amount of current that flows through the device from drain to source.

The IXTK200N10P is excellent for high frequency/high current applications, as it has low gate charge which results in faster switching speeds. Its 200V drain-source voltage rating and 10A continuous current rating make it very suitable for robust and high power applications. With its combination of features, the IXTK200N10P is ideal for a wide range of applications, such as motor drives, DC-DC converters, and switch-mode power supplies.

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