Series:	MegaMOS™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150V
Current - Continuous Drain (Id) @ 25°C:	128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	15 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	540W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-264 (IXTK)
Package / Case:	TO-264-3, TO-264AA

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Introduction to IXTK128N15

The IXTK128N15 is a single, N-Channel enhancement mode MOSFET produced by IXYS Corporation. The IXTK128N15 is a 300V, 100A MOSFET with an advanced design that offers low gate charge and low on-resistance. This device can be used in applications that require a low on-time, fast switching, and high efficiency.

Application Field

The IXTK128N15 can be used in a variety of applications including high-efficiency power supplies, motor control, switching converters, and high-speed switching circuits. The device is also suitable for DC/DC polarity protection for solar cells and batteries, as well as for motor control and protection in electric vehicles. Due to its low on-resistance and low gate charge, the IXTK128N15 is suitable for applications where fast switching and high efficiency is required.

Working Principle

A MOSFET is an insulated-gate field-effect transistor (IGFET) that uses an electric field to control its conduction. When a voltage is applied to the gate electrode of the IXTK128N15, it creates an inversion layer in the channel between the source and drain. This inversion layer allows current to flow between the source and drain, thus allowing the device to be used as a switch. The IXTK128N15 is designed to be an enhancement-mode transistor, meaning that it needs a positive gate-source voltage (Vgs) to “turn on” the device. When Vgs reaches its threshold voltage, the device turns on and current can flow from the source to the drain. The IXTK128N15 also has a low input capacitance, which makes it suitable for high-speed switching applications.

Conclusion

The IXTK128N15 is a single, N-Channel enhancement mode MOSFET produced by IXYS Corporation. It is a 300V, 100A MOSFET with a low on-resistance and low gate charge that makes it suitable for applications requiring fast switching and high efficiency. It can be used in high-efficiency power supplies, motor control, switching converters, and high-speed switching circuits, as well as for DC/DC polarity protection for solar cells and batteries, and motor control and protection in electric vehicles. The IXTK128N15 is an enhancement-mode transistor, meaning that it needs a positive gate-source voltage (Vgs) to “turn on” the device. The device also has a low input capacitance, which makes it suitable for high-speed switching applications.

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