Allicdata Part #: | 1465-1079-ND |
Manufacturer Part#: |
MAGX-000035-05000P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 65V 1MHZ 14DFN |
More Detail: | RF Mosfet HEMT 50V 100mA 1MHz 14dB 12W 14-DFN (3x6... |
DataSheet: | MAGX-000035-05000P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 1MHz |
Gain: | 14dB |
Voltage - Test: | 50V |
Current Rating: | 3mA |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 12W |
Voltage - Rated: | 65V |
Package / Case: | 14-VDFN Exposed Pad |
Supplier Device Package: | 14-DFN (3x6) |
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A MAGX-000035-05000P Field Effect Transistor (FET) is a type of transistor frequently used in radio frequency (RF) applications. It is a four-terminal device with three terminals used to control the current flow and one terminal used to sense the current. FETs are capable of extremely high-frequency operation and are thus used in various communication and antenna applications, as well as RF amplifiers, mixers, and power amplifiers.
The MAGX-000035-05000P transistor is a depletion-mode N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), meaning that it is an active device with a P-type substrate. It has a low gate-source voltage, meaning that it can be operated from low voltage sources such as battery power. This transistor is suitable for RF applications where low voltage, power, and speed are important factors.
The principle of operation of the MAGX-000035-05000P is based on the principle of field-effect control of drain-source current. The device is constructed with an insulated gate that has a gate-source voltage applied to it. This voltage produces an electric field, which creates a current between the drain and source. The magnitude of this source-drain current is a function of the gate-source voltage. The device has a very high input resistance and low output resistance, which make it suitable for use in applications requiring both power and speed.
The MAGX-000035-05000P has several advantages over other FETs and other components used in RF applications. It is an efficient and low-power device that can be used in applications where space and power are limited. It can also be used in applications where speed is important, such as wireless communications. The device also has a wide operating temperature range, making it suitable for use in applications where temperature is a factor.
The MAGX-000035-05000P is a versatile FET that can be used in a variety of RF applications. It has a wide range of applications including RF amplifiers, mixers, and power amplifiers. It is also suitable for use in digital circuits and other devices where high speed is needed. The device has proven to be reliable and consistent in its performance, making it a popular choice for designers.
The specific data is subject to PDF, and the above content is for reference
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