Allicdata Part #: | MMBFJ210-ND |
Manufacturer Part#: |
MMBFJ210 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 15MA SOT23 |
More Detail: | RF Mosfet N-Channel JFET SOT-23-3 |
DataSheet: | MMBFJ210 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 15mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMBFJ210 is an advanced field-effect transistor (FET) which is specifically designed for use in radio frequency (RF) applications. This particular FET is classified as a junction field-effect transistor (JFET), which is a transistor with one or two semiconductor junctions.
This particular FET is also what is known as a N-channel JFET, which means that it is connected to a control gate and is designed to allow current to flow through it when the gate is activated.
In terms of its application, the MMBFJ210 FET is most commonly used in RF amplifiers, receivers and other similar kinds of circuits. This is because of its ability to amplify signals with high-frequency content without adding significant distortion. It is also used in circuits that require a large output power, such as those used in broadcasting and other high-powered applications.
In terms of the way it works, the MMBFJ210 is a voltage-controlled device, meaning that the amount of current it can pass through will be determined by the voltage applied to its gate. The amount of current that is allowed to flow through it can be adjusted by varying the voltage applied to the gate. This is why it is such a useful device for RF applications – it can be used to amplify signals without adding too much distortion.
When it comes to the design of the FET itself, the MMBFJ210 is made up of a series of metal oxide semiconductor (MOS) layers, with a metal channel running through the center. This channel is covered by a heavily doped silicon surface, which serves to control the flow of electrons through the channel. The MOS layers serve to insulate the channel from the outside environment, and the metal channel works to provide a path for current to flow.
In conclusion, the MMBFJ210 is an advanced field-effect transistor designed specifically for use in RF applications. Its ability to pass large amounts of current with minimal distortion makes it an ideal device for use in amplifiers and receivers. Its design also helps to prevent any external interference or distortion from affecting the performance of the device.
The specific data is subject to PDF, and the above content is for reference
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