MMRF1006HSR5

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The MMRF1006HSR5 is an automotive grade, high power field effect transistor (FET) made from an N-channel lateral MOSFET with an integrated Schottky diode

The MMRF1006HSR5 is specially designed for use in applications that require high frequency power control, such as radios and amplifiers. Its high frequency performance allows for extended use in automotive and RF applications, where frequency and power stability are critical. It has a low on-resistance of 10.2 ohms and a maximum drain-source breakdown voltage of 65V.

Due to its design, the MMRF1006HSR5 offers excellent temperature stability, low switching speeds and a low gate capacitance. Additionally, it is highly tolerant to electrical and thermal circuit stresses, allowing it to be used in high temperature, high frequency applications. It is also highly efficient, with a low power consumption.

The MMRF1006HSR5 works on the principle of the field effect transistor. A field effect transistor (FET) is a type of transistor that utilizes the movement of charge carriers (electrons or holes) from one region of the semiconductor material to the other. This movement of charge carriers creates a field-effect, which controls the transistor’s (and therefore the circuit’s) current flow. The FET is used in applications requiring high-frequency, high-power control, such as radios and amplifiers, due to its high frequency performance.

The MMRF1006HSR5 has an integrated Schottky diode which is used to protect against excessive current flow in either the drain or source. The Schottky diode provides an excellent rectification performance, which is indispensable in RF and automotive applications. Additionally, the diode’s low reverse recovery time ensures that high frequency signals do not cause the circuit to back-saturate and that the MMRF1006HSR5’s switching speeds are maximized.

The MMRF1006HSR5 is highly versatile and can be used in a variety of electronic products, including radios and amplifiers, automotive applications, consumer electronics, industrial machines and devices and telecommunications. Its high frequency performance, excellent temperature stability and highly efficient design has made it ideal for use in a wide range of applications.

In summary, the MMRF1006HSR5 is an N-channel, lateral MOSFET field effect transistor with integrated Schottky diode. It is designed for use in high frequency, high power applications, such as radios, amplifiers and automotive applications. Its high frequency performance, temperature stability and low gate capacitance allow it to be used in a variety of applications. It is highly efficient and is capable of withstanding electrical and thermal circuit stresses.

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