Allicdata Part #: | MMRF1314GSR5TR-ND |
Manufacturer Part#: |
MMRF1314GSR5 |
Price: | $ 354.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS 960-1215MHZ 1000W PEAK 50V |
More Detail: | RF Mosfet LDMOS (Dual) 50V 100mA 1.4GHz 17.7dB 100... |
DataSheet: | MMRF1314GSR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 322.54800 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.4GHz |
Gain: | 17.7dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 1000W |
Voltage - Rated: | 105V |
Package / Case: | NI-1230-4S GW |
Supplier Device Package: | NI-1230-4S Gull Wing |
Description
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The MMRF1314GSR5 is an advanced type of field effect transistor (FET) specifically designed to work in radio frequency (RF) applications. It has a Gate Source Voltage (VGS) of 5 ±1V, and is capable of withstanding higher temperatures than other FETs. It has a Drain Current (ID) of 13A and a Maximum Drain Source Voltage of 250V. It is manufactured by the Shenzhen Tianhai Semiconductor Co., Ltd. This company has been designing and producing electronic components for over ten years.The MMRF1314GSR5 can be used in a variety of RF applications such as amplifiers, receivers, and transmitters. Its suitability for these applications is due to its high levels of microwave performance. Its design also enables it to be used in high power applications such as radio broadcast and television transmitters.The main components of the transistor are the P-channel and N-channel MOSFETs, which are a type of unipolar transistors. These transistors can either be completely on, completely off, or in between, depending on the amount of voltage being applied. The P-channel MOSFET is used to amplify the input signal while the N-channel MOSFET is used to provide the switching function.In operation, the MMRF1314GSR5 combines the P-channel and N-channel MOSFETs so that the signal can be amplified and switched between an on and off state. The signal is then transmitted to the output port. The amount of amplification or switching can be adjusted by changing the gate source voltage (VGS).The use of the MMRF1314GSR5 in RF applications requires that the device is stable and operates correctly over a wide range of temperature and voltage conditions. To ensure this, the device is tested for higher temperatures and long-term stability before being released.The MMRF1314GSR5 is a highly reliable and efficient FET that is well suited for RF applications. It is capable of withstanding high temperatures, and its ability to be operated at either high or low voltages makes it ideal for use in a range of radio broadcast and television transmitters. Its ease of use and its consistent performance make it a great choice for any application involving radio frequency signals.
The specific data is subject to PDF, and the above content is for reference
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