Allicdata Part #: | MMRF1317HR5TR-ND |
Manufacturer Part#: |
MMRF1317HR5 |
Price: | $ 404.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS 1030MHZ 1550W PEAK 50V |
More Detail: | RF Mosfet LDMOS (Dual) 50V 100mA 1.03GHz 18.2dB 13... |
DataSheet: | MMRF1317HR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 368.14300 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.03GHz |
Gain: | 18.2dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 1300W |
Voltage - Rated: | 105V |
Package / Case: | SOT-979A |
Supplier Device Package: | NI-1230-4H |
Description
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Introduction
The MMRF1317HR5 is a RF MOSFET with a low noise figure and a maximum of 17 dB gain. It has a high breakdown voltage (50 V), high frequency operation (DC-3GHz) and a good drain efficiency (75%). It is a multi-mode device, which is capable of operating as both a low-noise amplifier and a high power switch.Application Field
The MMRF1317HR5 is used in a variety of applications. It is especially suitable for use in radio and satellite communication systems, as a low noise amplifier and a high power switch. It is also ideal for use in base station antenna systems, where it can be used as a booster to amplify signals and extend the range of the system. It can also be used in power amplifier applications, where its high power and high frequency characteristics are ideal.Working Principle
The MMRF1317HR5 uses a metal-oxide-semiconductor field-effect transistor (MOSFET) for its operation. This type of transistor is capable of providing high current gains, with larger signals and higher efficiency than other types of transistor. The MOSFET is composed of a substrate, gate, source and drain regions. When a voltage is applied to the gate of the MMRF1317HR5, the gate oxide becomes very thin, allowing electrons to pass from the gate to the drain region. This causes a voltage difference between the source and the drain, and results in an increase in the current flow between the two regions. The current gain provided by the MOSFET is determined by the ratio between the drain current and the gate voltage.The MMRF1317HR5 is designed to provide a low noise figure, by minimizing the noise generated by the source region. This is achieved by using specialized production processes, which increase the quality and consistency of the source region. The high power output of the MMRF1317HR5 is achieved by increasing the drain current, while maintaining a high frequency of operation.Conclusion
The MMRF1317HR5 is an RF MOSFET device with a low noise figure, high breakdown voltage and high frequency operation. It is ideal for use in radio and satellite communication systems, base station antenna systems and power amplifiers. It uses a metal-oxide-semiconductor field-effect transistor to provide high current gains, low noise figure and high power output. With its combination of features and performance, the MMRF1317HR5 is an ideal choice for a wide range of RF applications.The specific data is subject to PDF, and the above content is for reference
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