MMRF1013HR5

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MMRF1013HR5 is an advanced Si N-Channel Enhancement Mode MOSFET which supports high-frequency operation. It has a small package type, making it a convenient choice for integrating into miniaturized, low-power consumption systems. This device has been specifically designed for radio-frequency switching applications that incorporate surface mount high-frequency bias voltages.

Application Field

The main application field of MMRF1013HR5 is switch-mode of power supply and wireless communication network. It is also suitable for automotive and consumer mobile applications. With the high-speed switching performance, it is also applicable to the broadband power amplifier and partial power amplifier cascading power supply.

MMRF1013HR5 features minimum 0.8V gate drive voltage and high FOM with low gate and drain-source capacitances, providing excellent space and power savings in RF applications. It delivers industry-leading RF performance with low 4.5nH drain-gate loop inductance, minimum subharmonic distortion, improved insertion losses and fast switching speed at high drain-source voltages.

Working Principle

The working principle of MMRF1013HR5 is based on a field effect transistor (FET) which utilizes a metallic-oxide semiconductor with three distinct terminals. A voltage applied between gate and source will induce a field that is proportional to the gate voltage, and this field will pinch-off and conduct depending on the magnitude of this voltage. In this state, drain current will flow freely and be linearly limited by the applied drain-source voltage.

To efficiently control the current availability, the device is constructed in such a way that it can withstand overvoltage and reverse current conditions to a certain degree. This is achieved by the implementation of a safety mechanism that will turn off the current when the drain-source voltage exceeds the maximum ratings of the device. This also helps in preventing the device from sustaining permanent damage in case of overvoltage or reverse current situations.

The MMRF1013HR5 is robust and highly recommended for use in RF circuits. Its design ensures a wide range of operating frequency, low gate and drain-source capacitances, and high-speed switching performance. It is a suitable choice for applications that require fast switching and minimal power consumption.

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