Allicdata Part #: | MMRF1315NR1TR-ND |
Manufacturer Part#: |
MMRF1315NR1 |
Price: | $ 19.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ TO270 |
More Detail: | RF Mosfet LDMOS 28V 450mA 880MHz 21.1dB 14W TO-270... |
DataSheet: | MMRF1315NR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 17.55700 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 21.1dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 14W |
Voltage - Rated: | 66V |
Package / Case: | TO-270-2 |
Supplier Device Package: | TO-270-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMRF1315NR1 series of transistors are high performance discrete components used in a wide range of applications such as wireless communications, computers, portable electronics, and automated test equipment. They are members of the family of FETs (Field Effect Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). These transistors are specially designed with high frequency characteristics to allow their use in Radio Frequency (RF) circuits, enabling efficient performance.These components are offered in a surface mount package with a flat top design which makes them suitable for automated pick-and-place assembly processes. The integrated circuit itself features a low thermal resistance and can operate at frequencies in excess of 10GHz, making it a suitable choice for high frequency applications.MMRF1315NR1 transistors rely on the MOSFET design principle to control the current flow through the device. This is achieved by applying a control voltage to the Gate via a special integrated circuit Electro Static Discharge (ESD) protection structure. This will create an electric field within the MOSFET which will be used to control the current flow.The operation of the transistor is based on the principle of transistor action, which is the ability of a transistor to amplify a small electrical signal. This is achieved by using two different types of layers, one is the source and the other is the drain. The Gate terminal is used to control the electric field which will ultimately influence the current flow.The MMRF1315NR1 transistors feature a high operating frequency, high supply voltage and low noise figure, making them suitable for many different types of RF applications. They are also well suited for applications that require a high performance switching element such as in LNBs (Low Noise Block Converters), amplifiers, attenuators and other similar devices that require precise operation.In conclusion, the MMRF1315NR1 series of transistors are high performance devices that are well suited for wireless communications, computer systems, portable electronics and automated test equipment. They feature a low thermal resistance, making them suitable for applications that require high frequency operation, and a high supply voltage for efficient switching performance. These transistors rely on the MOSFET design principle and a specialised ESD protection structure to control the electric field and current flow. Therefore, the MMRF1315NR1 offers a powerful, reliable and cost-effective solution for high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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