MMRF1314HR5 Discrete Semiconductor Products

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The MMRF1314HR5 is a high performance Field-Effect Transistor (FET) used in various radio-frequency (RF) and microwave applications. The device is specifically designed to provide better than expected performance while decreasing size, power consumption and improving reliability. It has very low input noise, high efficiency and excellent reverse isolation. The MMRF1314HR5 is built with a design that is optimized for use in parameters such as VSWR or return loss.

The MMRF1314HR5 is a high power and high voltage device that can handle up to 30 W of input power and operate at voltages up to 25 V. It is a double-junction field-effect transistor (FET) with a self-cooling structure and incorporates an internal external thermal compensation system. The device has an epitaxial planar-doped N-type silicon foundation and an active region that is protected by an oxide passivation layer. The device design also includes a low noise pre-amplifier and built-in bias circuit, which contribute to its high performance and low noise features. Furthermore, the package design provides superior dissipation and thermal resistance for improved system performance.

The MMRF1314HR5 is ideal for applications that require high power output and high linearity such as mobile communications, Wi-Fi systems, and high-definition television. It is capable of providing increased power handling and spectral purity compared to other FETs. The device produces high linearity and low noise performance at frequencies up to 6 GHz. Additionally, it has a high thermal capacity and excellent temperature stability. This helps to ensure consistent performance in dynamic temperature variation. The device also has a low switching-loss characteristic, allowing it to handle higher power signals.

The MMRF1314HR5 operates on the principle of field effect modulation. It has an insulated gate that acts as a variable resistance to control the amount of current that flows through the device. By controlling the gate voltage, the current that flows through the device can be modified allowing it to be used to amplify signals. The circuit also includes built-in bias components which control the drain current. This helps to ensure that the device operates in the linear region of the transfer curve.

The MMRF1314HR5 is an ideal choice for a wide range of RF and microwave applications that require high linearity and low noise. It is designed to provide superior system performance and reliable operation in extreme temperature environments. It is also a great choice for many other high power and low-distortion applications. Its excellent performance features, low power consumption and robust design make it a dependable and popular choice for a variety of applications.

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