MMRF1021NT1 Allicdata Electronics
Allicdata Part #:

MMRF1021NT1-ND

Manufacturer Part#:

MMRF1021NT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 30V 870MHZ PLD1.5W
More Detail: RF Mosfet LDMOS 7.5V 100mA 870MHz 15.2dB 7.3W PLD-...
DataSheet: MMRF1021NT1 datasheetMMRF1021NT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 870MHz
Gain: 15.2dB
Voltage - Test: 7.5V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 7.3W
Voltage - Rated: 30V
Package / Case: PLD-1.5W
Supplier Device Package: PLD-1.5W-2
Description

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The MMRF1021NT1 is an RF MOSFET that can be widely applied in a range of electronic equipment where its high functionality, total performance, and excellent price performance ratio make it an ideal choice. It is well suited for use in RF amplifiers operating between 0.1 MHz and 10 GHz, and can be used in microwave and optical amplifier applications. In addition, it can be used as a power amplifier in high-performance computer systems, in aerospace, and in wireless telecommunication applications.

The MMRF1021NT1 is constructed using the latest high-power MOSFET technology, and designed to meet the requirements of demanding applications. It features extremely low thermal impedance, allowing for high efficiency. Its low ON-resistance and low output capacitance enable high-frequency power gain and low power consumption, making it suitable for high-power applications. To ensure excellent performance in hostile environments, the MMRF1021NT1 also includes a built-in temperature detector to provide over-temperature protection if necessary. Additionally, this device is designed for exceptional reliability and high system immunity.

The working principle of the MMRF1021NT1 is based on the switching of the charge carriers between two regions, called the source and the drain. These regions can hold a varying number of charge carriers, either electrons or holes depending on the type of MOSFET used. By applying a voltage to the gate, which controls the amount of current in the drain, the amount of charge carriers in the source can be changed. This, in turn, affects the amount of current in the drain and therefore the amount of power passing through the device. This is the basic principle of operation for the MMRF1021NT1, allowing it to be used in a wide range of applications.

The MMRF1021NT1 is ideal for RF amplifier systems, telecom systems, and other microwave applications. Its low power consumption and high power gain also make it ideal for use in high-performance computers, as well as in aerospace and wireless communication systems. Due to its low thermal impedance and built-in over-temperature protection, it can also be used in hostile environments. Overall, the MMRF1021NT1 is a reliable and cost-effective solution for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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