MMRF1017NR3

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The MMRF1017NR3 is a High Electron Mobility Transistor (HEMT) by Freescale Semiconductor that is used in many electronic circuits as an RF switch device due to its high linearity, high current gain, and wideband characteristics. This particular HEMT has a drain-to-source breakdown voltage of 10 V, a drain current of 0.8 A, a gate-to-source threshold voltage of 6 V and an on-resistance of 24 Ω.

The MMRF1017NR3 is a depletion type HEMT that can be used for both low noise amplifiers (LNA) and switches. It works by using the gate bias to control the drain current flow, allowing for high linearity operation, as well as allowing for higher power gain than conventional MOSFETs.

The HEMT is a good choice for use in RF applications. It is suitable for use in frequency bands ranging from 40 MHz to 6 GHz and can work with a variety of power levels, from 100 mW to 10 W. It is also well-suited for use in high-power circuits as well as high-dynamic range circuits due to its low noise figure and high linearity.

The MMRF1017NR3 can be used in a wide range of applications, ranging from radio communication to broadband data transmission. It is suitable for use in cellular base station transmitters, mobile radio receivers, and satellite communication systems. It is also suitable for use in automotive applications due to its high current gain, low distortion and fast switching times.

The MMRF1017NR3 is an ideal choice for many applications. It provides a high level of linearity and low noise figure, making it a good choice for use in many RF circuits. The device offers a range of features including high current gain, small form factor, and low cost. The device is also well-suited for use in many power amplifiers, such as those used in cellular base station transmitters and mobile radio receivers.

The MMRF1017NR3 works by allowing the gate to control the flow of current through the MOSFET. When the gate is raised, current will flow between the source and drain of the transistor. The level of current that flows through the MOSFET is determined by the amount of voltage applied to the gate. By changing the voltage on the gate, the current through the MOSFET can be adjusted accordingly.

The MMRF1017NR3 is a versatile device that can be used in a variety of applications. It has a high level of linearity, making it a good choice for use in RF applications. It also has a low cost and smaller form factor, which make it suitable for use in many different types of circuits. The device can be used in a wide range of applications, from radio communication to broadband data transmission.

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