Allicdata Part #: | MMRF1015GNR1-ND |
Manufacturer Part#: |
MMRF1015GNR1 |
Price: | $ 9.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 68V 960MHZ |
More Detail: | RF Mosfet LDMOS 28V 125mA 960MHz 18dB 10W TO-270-2... |
DataSheet: | MMRF1015GNR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 8.98730 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 125mA |
Power - Output: | 10W |
Voltage - Rated: | 68V |
Package / Case: | TO-270BA |
Supplier Device Package: | TO-270-2 GULL |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMRF1015GNR1 is an RF complemental metal oxide semiconductor (CMOS) FET switch specifically designed for use in commercial and communications industries. This device combines the benefits of lower power loss with the reliability of a low insertion loss design. This device is suitable for applications such as switch matrixes, high frequency amplifiers, and radio modulator and demodulator designs, as well as other communications applications.
The MMRF1015GNR1 has two essential functions in a communications system. The first is to act as a driver (or amplifier) of the radio frequency signal, and the second is to switch the RF signal on and off. The device is composed of an array of layers of NanoCMOS transistors that are flip-flopped, or inverted, from each other. The MMRF1015GNR1 is designed to quickly switch in and out the RF signals applied to its drain and source terminals. This action will allow for a high performance, low noise ratio for the system.
The MMRF1015GNR1 has several key differences from other RF switches available in the market. It is designed for high performance and low power consumption due to its architecture and NanoCMOS transistors. Its high-current input and output stages help achieve high-speed switching, especially at very low voltages. The device is also more reliable than other RF switches due to its low gate capacitance and gate-to-drain capacitance. This low gate capacitance also helps reduce crosstalk and interference.
The MMRF1015GNR1 is also designed to be cost effective and can be paired with other devices to create a more powerful RF path. It is compatible with industry-standard packages and can be soldered onto a printed circuit board (PCB) without the need for special ultra-stable solder techniques. The device also features a built-in switch control circuit that provides low-voltage, low-noise switching.
The MMRF1015GNR1 works on the principle of metal oxide semiconductors, where an electrical field is formed between two metal contacts, through a layer of metal oxide. The voltage applied determines the type of current that flows through the device; an increase in voltage produces a larger current through the contacts, while a decrease in voltage produces a smaller current. This same principle is used in transistors, allowing for the manipulation of current flows even further.
The MMRF1015GNR1 is a robust and reliable device due to its low power loss design, and its NanoCMOS structure. It is also suitable for applications requiring high speed switching, high-power input, and low power-consumption. Since this device is designed with high-performance and low power-consumption in mind, it is perfect for many applications in the commercial and communications industries, including switch matrixes, high-frequency amplifiers, radio modulators, and demodulators, as well as other communications applications.
The specific data is subject to PDF, and the above content is for reference
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