Allicdata Part #: | MMRF1305HSR5-ND |
Manufacturer Part#: |
MMRF1305HSR5 |
Price: | $ 55.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 133V 512MHZ NI780S-4 |
More Detail: | RF Mosfet LDMOS (Dual) 50V 100mA 512MHz 26dB 100W ... |
DataSheet: | MMRF1305HSR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 50.74560 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 512MHz |
Gain: | 26dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 100W |
Voltage - Rated: | 133V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
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The MMRF1305HSR5 is a high performance RF MOSFET that supports standard surface-mount technology. It is a high-performance high-level RF power FET class-F device. The device can be used for a variety of power amplifier applications, such as broadband amplifiers, high-efficiency power amplifiers, wide-band amplifiers, and Gate Stabilized RF power amplifiers. It also supports high power output and high efficiency in advanced microwave communication systems.
The MMRF1305HSR5 is a silicon-based RF MOSFET that features an advanced FET gate drive and optimized gate protection. It has the highest power density of any surface-mount FET device in its class, with a total gate boundary area of 7 x 5 mm. The high FET gate voltage provided by the device helps in achieving higher output power levels and higher efficiency. The device is designed to provide superior performance in a wide range of RF amplifier applications.
The MMRF1305HSR5 is a metal-oxide-semiconductor FET (MOSFET). It works by controlling the current flow between the source and drain terminals by using a voltage applied to the gate terminal. The application of an electric charge to the gate terminal results in a field-effect in the device, which modulates the conductivity between the source and drain of the device. By controlling the gate voltage to the device, the current flow between the source and drain can be adjusted and hence, power amplification can be achieved.
The MMRF1305HSR5 has a wide gate voltage range from 0 to 120 volts, provides superior thermal insulation and low gate leakage current. It features a high breakdown voltage, high channel gain, and high operating temperature of up to 150 °C. It also has a low on-resistance (3.3 Ohm maximum at 100V gate voltage) and low gate-to-source capacitance (1.25nF maximum at 100V gate voltage).
The MMRF1305HSR5 is ideal for power amplifiers in applications such as Wi-Fi, Bluetooth, ZigBee, and other wireless technologies. It is also suitable for applications such as wide-band amplifiers, narrow-band amplifiers, high-power amplifiers, and linear amplifiers. The device is also ideal for professional applications such as power amplifiers for automotive use and medical applications.
In summary, the MMRF1305HSR5 is a high-performance RF MOSFET featuring high power output and high efficiency. It has excellent thermal insulation characteristics and wide gate voltage range. The device is ideal for a variety of power amplifier applications and for use in professional applications such as medical and automotive.
The specific data is subject to PDF, and the above content is for reference
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