MMRF5016HSR5

Series:	--
Part Status:	Active
Transistor Type:	HEMT
Frequency:	1.8GHz ~ 2.2GHz
Gain:	--
Current Rating:	--
Noise Figure:	--
Power - Output:	32W
Voltage - Rated:	48V
Package / Case:	NI-400S-240
Supplier Device Package:	NI-400S-240

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MMRF5016HSR5 Application Field and Working Principle

The MMRF5016HSR5 is a type of field-effect transistor (FET), more specifically a normally-off, high-speed, high-frequency, RF power MOSFET, with an integrated Schottky diode, and an integrated source inductor. It utilizes the most advanced high-efficiency GaN technology and is especially suited to satisfying the demanding requirements of next-generation military and industrial radio-frequency (RF) applications.

The modern power MOSFET transistors have opened the career of high efficiency and high power applications for military and industrial RF field. The MMRF5016HSR5 has higher power density, improved efficiency, fast switching speed, and good thermal stability than traditional power transistors. Due to its performance characteristics, this power MOSFET transistor is suitable for various applications such as high-frequency DC to DC converters, low-noise amplifiers, class-E power amplifiers, digital pre-distortion linearizers, push-pull amplifiers, and multi-octave wide-band amplifiers.

In order to understand the working principle of MMRF5016HSR5, it is important to understand the basics of FETs and MOSFETs. Both FETs and MOSFETs are three-terminal devices, consisting of source and drain terminals, gate terminal, and internal elements like channels, doping, and gate oxide. The gate terminal of the FET is connected to a metal overlay on the substrate separated from the channel by a thin layer known as gate oxide. On the other hand, the gate terminal for the MOSFET is connected directly to the metal contact and separated by the gate oxide from the underlying substrate. The MOSFET utilizes the electric field between the gate and the substrate to modulate the current between the source and the drain terminals.

The MMRF5016HSR5 is a normally-off type MOSFET, acceded by a Schottky diode to the source terminal, and an integrated source inductor connected to the gate. The Schottky diode connected to the source terminal is used to ensure low switch-on losses while the source inductor connected to the gate terminal helps to reduce the spikes in the switching waveform. The presence of a diode as well as an inductor results in better switching performance, a higher power density, and lower parasitic losses. The integrated source inductor also aids in inhibiting the spikes to the MOSFET structure, further contributing to its thermal stability and efficiency.

In summation, the MMRF5016HSR5 is an advanced MOSFET transistor with integrated Schottky diode and source inductor. The efficiency, power density, and thermal stability offered by this MOSFET make it well-suited for high-frequency DC-DC conversion and a host of other military and industrial radios-frequency (RF) applications.

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