MMRF1320NR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	230MHz
Gain:	26.1dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	150W
Voltage - Rated:	133V
Package / Case:	TO-270-4
Supplier Device Package:	TO-270 WB-4

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MMRF1320NR1 application field and working principle

MMRF1320NR1 is a type of power field-effect transistor (FET). It is the most commonly used type of transistor when it comes to RF signals, as they are preferred over bipolar junction transistors (BJTs) because of their lower distortion and noise. Compared to BJTs, FETs also have higher input impedance, higher operating temperature range, and more uniform response over temperature range.MMRF1320NR1 transistors are used in a wide range of applications, such as low and medium frequency amplifier stages, linear and switching regulators, oscillators, switching circuits, power amplifiers and VHF amplifiers. They are also used in Class D RF amplifiers, RF and microwave filters, radio receivers, high frequency control power converters, high frequency switching circuits, Class A and B low-noise amplifiers, as well as a wide range of other high frequency applications.One of the main characteristics of the MMRF1320NR1 is its ability to handle a relatively high supply voltage. It can handle up to 30V, and is typically used in systems that operate at high voltage and power. Additionally, the MMRF1320NR1 has a particularly low on-resistance of around 1 ohm, which allows the device to handle a large range of capacitive loads. The working principle of the MMRF1320NR1 is based on semiconductor technology. This type of transistor consists of four electrodes: a source, a drain, a gate, and a body. When a bias voltage is applied to the gate, a current passes through the drain and source, depending on the amount of voltage applied. The operation of the MMRF1320NR1 is also based on a specific type of modulation called Enhancement mode. This is the type of modulation where the MOSFET only works when enough voltage is applied to its gate. Therefore, when the voltage on the gate reaches the threshold voltage, current will flow from the source to the drain. This is what allows the transistor to amplify the signal.The MMRF1320NR1 is a great choice for RF and microwave applications due to its high-voltage supply and low-resistance. It is also very versatile and can be used for a wide range of applications. Additionally, its low power consumption makes it an ideal choice for power-sensitive applications. The MMRF1320NR1 is one of the most versatile and powerful transistors available in the market today.

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