MMRF1008GHR5

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	900MHz ~ 1.215GHz
Gain:	20.3dB
Voltage - Test:	50V
Current Rating:	100µA
Noise Figure:	--
Current - Test:	100mA
Power - Output:	275W
Voltage - Rated:	100V
Package / Case:	NI-780GH-2L
Supplier Device Package:	NI-780GH-2L

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MMRF1008GHR5 is a high frequency N-channel enhancement mode MOSFET, developed by GE Sensing and Control. It has been specifically designed to provide high power and large bandwidth in applications where the MOSFET needs to switch between two different voltage levels. The device features a high gain, low gate-source capacitance, low thermal resistance, and a wide operating temperature range.This MOSFET is ideal for RF applications such as in amplifiers, automatic level control, modems, and antenna switches, where it is necessary to rapidly and accurately switch from one voltage level to another. It is also suitable for switching applications in computer peripheral equipment and switching of low voltage, low current logic levels.The MMRF1008GHR5 is a monolithic component that has two types of terminations, namely, gate-source and gate-drain. The gate-source termination connects to the gate of the MOSFET, while the gate-drain terminal is connected to the drain of the MOSFET. To control the flow of electrical current through the device, the gate voltage is used. The gate-source capacitance is low, and the gate-drain capacitance is reduced by using a reverse gating design.The MMRF1008GHR5 is a high voltage device that can handle up to 50V between the gate and source and up to 30V between the gate and drain. It also has a breakdown voltage of 100V. The device has a maximum operating temperature of 175°C and a total power dissipation of 0.9W.The working principle of the MMRF1008GHR5 is based on the principle of field-effect transistors (FETs) in which the drain current is controlled by the voltage applied to the gate. When a negative voltage is applied to the gate electrode, the electric field created causes a portion of the drain to be deactivated, thereby limiting the current flow. When a positive voltage is applied, the electric field increases and the drain is activated, allowing current to flow through the device.The device has a high gain of 7.2V/V and a low gate-source capacitance of 5.5pF. It is capable of switching signals between two voltage levels at frequencies up to 500MHz. The device also has a low thermal resistance of 5°C/W, making it suitable for high power applications.In summary, the MMRF1008GHR5 is an N-channel enhancement mode MOSFET designed for high frequency and large bandwidth applications. It has two types of terminations, gate-source and gate-drain, and a low gate-source capacitance and low thermal resistance. The device has a high gain and can switch signals between two voltage levels at frequencies up to 500MHz. It is ideal for RF applications as well as logic signal switching.

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