MMRF1312GSR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMRF1312GSR5 is a high voltage, N-channel, enhancement mode, GaN-on-Diamond, normally-off Metal Oxide Semiconductor Field Effect Transistor (MOSFET) used in high frequency power switching applications. The device features a low on-state resistance, low output capacitance and high breakdown voltage, making it ideal for use in power amplifier, switching applications and other high power applications where small size, low on-state resistance and high breakdown voltage are desired.

GaN-on-Diamond technology offers high performance and reliability in a low profile package with maximum power density. The GaN-on-Diamond technology makes it possible to achieve superior performance levels compared to competing technologies in a very small form factor. The MMRF1312GSR5 utilizes high voltage GaN-on-Diamond technology allowing for a power density that is considered to be best in class.

The device is designed for use in applications such as high efficiency power amplifiers, high frequency power switching applications and other high power applications that require high breakdown voltage and low on-state resistance. It is also suitable for use in high voltage power supplies, high voltage RF amplifiers, RF switching applications and high frequency industrial equipment.

The working principle of the MMRF1312GSR5 involves the application of an electric field to a metal oxide semiconductor, which in turn creates a channel between the source and the drain of the device. The electric field applied to the gate terminal of the device controls the current that flows through the device acting as a switch. By varying the electric field applied to the gate, the device can be switched off, or it can be switched on and the amount of current flowing will also be controlled.

In addition to its high performance, the device also features excellent thermal conductivity and low output capacitance. The device also features a high power rating, high voltage rating and an industry leading on-resistance of 0.81 Ω. This low on-resistance enables higher efficiency and higher power due to lower dropouts and reduced power losses.

In conclusion, the MMRF1312GSR5 is a high performance GaN-on-Diamond MOSFET that is suitable for use in a range of high frequency power switching and high power amplifier applications. Its low on-state resistance and low output capacitance makes it an ideal choice for applications requiring high efficiency and high power density. Its advanced technology and excellent thermal performance make the device suitable for a range of demanding applications.

The specific data is subject to PDF, and the above content is for reference