MMRF2007GNR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMRF2007GNR1 is an enhancement mode field effect transistor (FET) used in radio frequency (RF) applications. This type of transistor is also referred to as a MOSFET, or metal oxide semiconductor field effect transistor. The MMRF2007GNR1 is a wide band device and is well-suited for use in RF amplifiers, radio receivers, and transmitters.

Application Field

The MMRF2007GNR1 is designed for use in high-frequency applications up to 1 GHz. It is ideal for applications requiring low off-state leakage, high input impedance, and low noise performance. It is commonly used as an amplifier and oscillator in radio receivers, radio transmitters, and RF amplifiers. It is also commonly used as a differential amplifier in narrowband applications.

Device Description

The MMRF2007GNR1 is an enhancement mode FET that has an on-state resistance of 5 ohms. It is constructed with a self-aligned poly silicon gate oxide, which reduces both gate-to-channel capacitance and leakage currents. The device has a pinch-off voltage of 1.07 V and a breakdown voltage of 105 V. The maximum input power is 5 watts, while the maximum continuous drain current is 21 mA.

Working Principle

The basic working principle of the MMRF2007GNR1 is the same as for other FETs. It is an insulated gate device, meaning that it has an isolation layer between the gate and the channel. This isolation layer allows for a precise control of current flow through the device by applying a voltage between the gate and source.

When the gate voltage is higher than the source voltage, the device is said to be in the “on” state. This causes a large current to flow through the device between the drain and source terminals. When the gate voltage is lower than the source voltage, the device is said to be in the “off” state, and no current flows through the device. By adjusting the gate voltage, an amplifier can be used to amplify a signal.

Other Characteristics

The MMRF2007GNR1 has a frequency response of 3 to 1 GHz. It has an operating temperature range from -40 to 150 degrees Celsius. The device is also resistant to a wide range of chemicals and can withstand exposure to temperatures up to 200 degrees Celsius for prolonged periods of time. The device is RoHS compliant and features an ESD rating of 1 kV.

The MMRF2007GNR1 is a high-performance FET that is suitable for use in a wide range of RF applications. It is constructed with high-quality materials and is designed to provide superior performance in terms of input impedance, on-state resistance, and noise performance. Its wide band characteristics make it well-suited for use in radios, RF amplifiers, and other high-frequency applications.

The specific data is subject to PDF, and the above content is for reference