Allicdata Part #: | MMRF1008HR5TR-ND |
Manufacturer Part#: |
MMRF1008HR5 |
Price: | $ 213.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 100V 1.03GHZ NI-780 |
More Detail: | RF Mosfet LDMOS 50V 100mA 1.03GHz 20.3dB 275W NI-7... |
DataSheet: | MMRF1008HR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 194.17700 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.03GHz |
Gain: | 20.3dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 275W |
Voltage - Rated: | 100V |
Package / Case: | SOT-957A |
Supplier Device Package: | NI-780H-2L |
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MMRF1008HR5 is a kind of transistor in categories of FETs (Field Effect Transsector) and MOSFETs (Metal Oxide Semiconductor Field Effect Transsector). It is designed to work as a radio frequency (RF) switch or attenuator. This type of transistor usually been used in fields of electronic signal modulation or signal modulation processing.
As RF signal issuing and data processing are becoming more important modern electronic applications, an exercise of signal modulation and modulation processing should be done in order to achieve a transfer signal with better signal quality. In this process, the FET and MOSFET in MMRF1008HR5 become significantly helpful. The possible applications that MMRF1008HR5 can be applied in includes, wireless communication, microwave technology, wireless signal modulation and wireless enabled products, such as cellular phones and other wireless device.
In order to better understand the operation mechanism of MMRF1008HR5, it is necessary to understand the principle of a FET and MOSFET. A FET is a transistor which relies electricity from a reverse-biased junction to control the conductive properties of a flow electrode. On the other hand, a MOSFET is a transistor which relies electricity to control the conductivity of an insulated gate in order to achieve conduction properties. In practice, both FETs and MOSFETs in MMRF1008HR5 transistors are commonly used.
Based on the aforementioned principles, the operation of MMRF1008HR5 transistor can be easily understood as an on-off switch. When a voltage is applied to the input terminal, the main gate of the transistor will be open. As a result, the MRF1008HR5 transistor which is connected to the output terminal will be switched on. In the meantime, when a current is applied to the output terminal, the main gate of the transistor will be closed. In this condition, the MRF1008HR5 transistor will be switched off, thus stopping the flow of current.
In addition to the switch function, the MMRF1008HR5 also offers a wide range of attenuation characteristics. These characteristics provide users with the ability to adjust the power gain or attenuation of the signal at various frequencies. In general, the attenuation level of the signal is controlled with a single resistor, allowing users to adjust the gain or attenuation of a signal without the need of changing additional components.
In conclusion, MMRF1008HR5 transistors are widely used in the fields of RF switch, RF attenuator, wireless communication and microwave technology. Thanks to its fast response time, high efficiency and low power consumption, the MMRF1008HR5 has a large potential for being used in a variety of different applications. Understanding of its working principles and application fields of MMRF1008HR5 will enable users to better apply this transistor on their application project.
The specific data is subject to PDF, and the above content is for reference
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