MMRF1011HSR5 Allicdata Electronics
Allicdata Part #:

MMRF1011HSR5-ND

Manufacturer Part#:

MMRF1011HSR5

Price: $ 321.16
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 100V 1.4GHZ
More Detail: RF Mosfet LDMOS 50V 150mA 1.4GHz 18dB 330W NI-780S
DataSheet: MMRF1011HSR5 datasheetMMRF1011HSR5 Datasheet/PDF
Quantity: 1000
50 +: $ 291.96600
Stock 1000Can Ship Immediately
$ 321.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.4GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 150mA
Power - Output: 330W
Voltage - Rated: 100V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Description

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The MMRF1011HSR5 by Microsemi is a Gallium Nitride (GaN) high electron mobility transistor (HEMT) radio frequency (RF) power amplifier that operates between 0.2-2.2 GHz, covering commercial and military bands. This wideband amplifier is designed to provide high gain and a high third-order intercept point which are highly useful for multiple applications.

The MMRF1011HSR5 is a high power GaN HEMT amplifier which provides a high gain and large third-order intercept point over its frequency range. It is rated from +17.5 to +30dBm, with a gain of >17dB, and a typical third-order intercept point of >41dBm. The amplifier is supplied in a 4x4mm plastic EPFlange surface mount package which is capable of withstanding high power levels.

The MMRF1011HSR5 offers a variety of uses in a variety of applications, such as Wi-Fi, direct-sequence spread spectrum (DSS), Wi-Max, LTE, and high power terrestrial and satellite communications. It is suitable for applications requiring high linearity, such as analog modulation, wide-band amplifiers, base station, active antenna systems, and distributed amplification applications.

Working principle of MMRF1011HSR5:

The MMRF1011HSR5 is a wideband power amplifier capable of operation from 0.2 to 2.2 GHz. It is based on an advanced gallium nitride high electron mobility transistor (HEMT) technology, providing superior performance over traditional gallium arsenide (GaAs) devices. The device features an input/output network and is designed to achieve linear operation while providing excellent small signal gain, along with high input and output return loss.

The amplifier\'s internal power handling and monitoring circuitry automatically optimizes the instantaneous output power across its operating frequency range, while allowing for direct operation without the need for external bias control. Its high-efficiency power handling circuitry allows operation with minimal supply current while providing excellent linearity.

The MMRF1011HSR5 is capable of delivering peak power levels of up to 50 watts in a small 3x3mm package. It also offers superior load mismatch and low distortion performance, along with high gain stability over temperature and supply voltage.

In conclusion, the MMRF1011HSR5 is an ideal choice for applications where high-efficiency, high linearity, and high power handling are needed. It offers excellent performance with a small footprint and is a cost effective solution for a wide range of high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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