MMRF1312HSR5

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The MMRF1312HSR5 is an RF MOSFET N-channel enhancement-mode Field-Effect Transistor (FET), ideal for a variety of applications such as Linear Amplification, Low Noise Amplification and Switching. This transistor allows excellent power, high gain and low noise performance, making it a great choice for an array of different jobs. The MMRF1312HSR5 has an MSL level of MSL1 (as determined by JEDEC J-STD-020), meaning that it is highly resistant to moisture, corrosion, and high temperature. Additionally, it performs well over a wide variety of operating conditions, allowing it to be used both in high voltage and low voltage circuits.

The MMRF1312HSR5 application field includes a wide range of consumer electronics and communication devices, including but not limited to cellular base station, satellite and antenna applications, radios, broadband and long–range communication equipment and industrial products. This transistor is also suitable for use in general purpose audio, linear amplification and switching circuits in both military and aerospace applications.

The MMRF1312HSR5 consists of a source, gate and drain terminal, connected by two N-type MOSFETs. The source and drain terminals provide the necessary voltage and current, while the gate is used to control the flow of electrons. The MMRF1312HSR5 is a enhancement-mode FET, meaning that the gate source voltage must be greater than the threshold voltage in order for it to conduct. As a result, the MMRF1312HSR5 can be used in both analog and digital circuits, with the gate voltage being used to switch between two different states.

The MMRF1312HSR5 features an on-resistance of 13.12ohms, and an off resistance of 1.35ohms. This makes it ideal for use in low-noise linear amplifier circuits, where low resistance is paramount. Additionally, the transistor features a high-gain performance of 17.7dB, making it suitable for a variety of RF applications. Furthermore, the transistor has an extremely low noise figure of -106dBm and high power rating of 15W, making it suitable for use in high-power applications.

In summary, the MMRF1312HSR5 is an excellent choice for a variety of applications, including linear amplification, low-noise amplification, and switching. It features excellent power, high-gain, and low-noise performance, making it suitable for a variety of audio and RF applications. Furthermore, its MSL1 level means that it is highly resistant to moisture and high temperatures, making it an ideal choice for both military and aerospace applications.

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