MMRF2005NR1

The MMRF2005NR1 is an RF MOSFET transistor that offers a reliable, high performance solution for a variety of applications. It is an extremely low drain-source on-state resistance and offers an on-state breakdown voltage of up to 80 volts. It also has an exceptionally low noise figure and a high input impedance for use in RF applications. The device is available in a variety of package designs and offers its own single-termination connection.

The MMRF2005NR1 is a common source field effect transistor, with either N-channel or P-channel configurations. The device is capable of operating in both enhancement and depletion modes, with its primary applications found in RF amplifier designs and general-purpose power devices. The low drain-source voltage ratings of the devices also makes them suitable for use in applications requiring high current operation, such as motor controllers and other power devices.

The device is capable of working over a broad range of frequencies, from DC or low frequencies, up to 1GHz or higher. It has a very low input capacitance of just 50pF, and its output provide a low-impedance load at higher frequencies. It has an excellent steady-state bias current rating, and it also features a low dynamic drain-source on resistance. All of these factors make it an ideal device for RF amplifier and switching designs.

The MMRF2005NR1 also features a lowl noise figure, with a maximum of 35dB, which makes it suitable for use in sensitive RF circuits. Its high input impedance allows for operation at high frequencies, without the need for an inductor or base resistor, saving space and allowing more flexibility in design. In addition, its low drain-source on-state resistance allows it to be used in low voltage circuits without sacrificing performance.

The MMRF2005NR1 is a great addition to any designer’s arsenal of transistors, and it offers a reliable, high performance solution for a variety of RF and power applications. Its low drain-source on-state resistance, high input impedance, low noise figure, and wide frequency range make it an ideal choice for RF amplifiers and power device applications. Its low input capacitance and low dynamic drain-source on resistance also make it an excellent choice for applications requiring high current operation.