Allicdata Part #: | MRFE6P9220HR3-ND |
Manufacturer Part#: |
MRFE6P9220HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ NI-860C3 |
More Detail: | RF Mosfet LDMOS 28V 1.6A 880MHz 20dB 47W NI-860C3 |
DataSheet: | MRFE6P9220HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.6A |
Power - Output: | 47W |
Voltage - Rated: | 66V |
Package / Case: | NI-860C3 |
Supplier Device Package: | NI-860C3 |
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The MRFE6P9220HR3 is a transistor in the FETS (field-effect transistors) and MOSFETS (metal-oxide-semiconductor field-effect transistors) RF (radio frequency) family. It is a high-power, transistors with 50.9voltations and 20-watt performance. It can be used as an amplifier in broadcasting, communication, and electrical engineering devices.
The MRFE6P9220HR3 is unique in that it uses a GaN-on-Silicon HEMT (High Electron Mobility Transistor) technology with high reliability, high efficiencies and wide RF operating range. This combination provides superior performance in high power applications. The device uses a 50.9volt, 20-watt performance rating and features an optimized input and output impedance, allowing for a wide range of applications.
The MRFE6P9220HR3 is a two-pin N-channel MOSFET transistor, which is an active component that forms the basis of most analog and digital circuits. It is a three terminal device with two gates connected to the source (S) and drain (D) and a third gate connected to a professional ground. It is a voltage-controlled transistor, and the gate voltage controls the flow of current through the drain and source.
The working principle behind the MRFE6P9220HR3 is that the gate voltage will control the flow of current through the drain and source. The gate being connected to the gate source allows the gate voltage to have control over the drain and source. As the voltage on the gate is increased, a larger amount of current flows through the drain and source. The current flow through the drain and source is limited by the maximum current rating of the device, which can be found in the device\'s datasheet. The device can act as an amplifier, voltage regulator, or current limiter, depending on the application.
The MRFE6P9220HR3 is suitable for a wide range of applications such as: Voltage Regulators; Broadcast Transceivers; TTL Driven Amplifiers; HF and VHF Radio Amplifiers; Modulators / Demodulators; Audio and Video Processors and Equipment; RF Power Amplifier assemblies; Medium Power RF Switches; Microwave Ovens; Radar Systems; and Automotive Electronics.
The MRFE6P9220HR3 combines reliable effective performance and high power with low noise. It is able to operate at frequencies up to 6 GHz, making it suitable for high power and laboratory purposes. It is a cost effective solution for industrial and commercial applications, making it the best choice for a wide range of RF amplification systems. The MRFE6P9220HR3 is a robust and reliable device that is designed to provide efficient performance and high-power handling.
The specific data is subject to PDF, and the above content is for reference
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