MRFE6S9200HSR3

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The MRFE6S9200HSR3 is a high-performance, small signal Gallium Nitride (GaN) Field Effect Transistor (FET) that is ideally suited for amplifier applications in the frequency range from 2 to 6 GHz, making it especially suitable for low noise amplifiers.

The MRFE6S9200HSR3 series is based on the latest high-performance GaN FETs and offer excellent performance in a compact form factor. With a compact 3x3mm package, the device offers a number of features that make it ideal for applications requiring high power output and low noise. The device is suitable for broadband and multiple applications in IEEE 802.11ac and Bluetooth 5.0 systems as well as point-to-point radio applications.

The MRFE6S9200HSR3 is designed to have a 20 V drain-source breakdown voltage, high switching speed and low gate-to-source capacitance. It is also designed to function as a Class A transistor with a collector-to-emitter voltage of 11 V. This device provides a high power density and a wide dynamic range, making it suitable for use in a variety of amplifier circuits.

Due to the silicon-like structure of GaN FETs, the MRFE6S9200HSR3 offers low on-state resistance and a low noise figure, making it ideal for use in low-noise amplifier applications. The device also offers excellent thermal performance and high efficiency, which makes it ideal for use in amplifier circuits where power dissipation must be minimized.

The MRFE6S9200HSR3 is typically used as power RF amplifiers in wireless communication systems. It is used in a variety of applications such as wireless access points and routers, wireless communication systems, point-to-point radio systems, cell phones, mobile broadband devices and consumer electronics.

The MRFE6S9200HSR3 is designed to operate in Class A formats, which means its output characteristics will depend on the voltage applied. The drain-source voltage determines the drain current, and therefore, the output power. When the device is biased, it will have a linear transfer characteristics, which allows it to operate in linear amplifiers mode. The device is designed to have low gate-to-source capacitance, which will reduce the noise generated by the device.

Furthermore, the MRFE6S9200HSR3 is designed to have a high switching speed. This makes it well suited for high-frequency applications, such as Wi-Fi and Bluetooth systems, where fast on/off switching is required. The device also has an external gate for controlling the bias applied to the device, which can be used to optimize the performance of the device for the specific application.

The MRFE6S9200HSR3 is a powerful and versatile FET which is ideal for a wide range of amplifier applications. The device offers excellent performance and features that make it especially suitable for low-noise amplifier applications in the frequency range from 2 to 6 GHz. It is also highly efficient and boasts a high power density, making it ideal for a variety of amplifier circuits.

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