NE68033-T1B-R44-A Allicdata Electronics
Allicdata Part #:

NE68033-T1B-R44-A-ND

Manufacturer Part#:

NE68033-T1B-R44-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-23
More Detail: RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mou...
DataSheet: NE68033-T1B-R44-A datasheetNE68033-T1B-R44-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: NE68033
Description

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The NE68033-T1B-R44-A device is a high-reliability monolithic microwave integrated circuit (MMIC) designed to operate in the range of 50MHz to 40GHz with high power and low noise. The circuit is built using an N-type MESFET (N-Metal-semiconductor field-effect transistor) technology, that offers excellent performance with low noise and high power output. It is designed for use in broadband wireless communication systems, such as mobile phones, mobile equipment and base stations.

Application Field of NE68033-T1B-R44-A

NE68033-T1B-R44-A is capable of operating wide range of frequency from 50MHz to 40GHz. The built-in MESFET features low noise and high power output, perfect for use in a broad range of applications. The device can be utilized in wireless communication systems, mobile phones, mobile equipment and base stations. It is also suitable for other applications such as navigation systems, antenna systems, and automotive applications.

Working Principle

NE68033-T1B-R44-A is a high-reliability MMIC that employs an N-type MESFET technology. The circuitry is designed to provide excellent performance with low noise and high power output. The device is able to achieve wide range of frequency from 50MHz to 40GHz. Its built-in MESFET feature provides low noise and high-power output, making it an ideal choice for wireless communication systems, such as mobile phones, mobile equipment and base stations.

The device is designed with bidirectional low noise amplifier circuit, designed to operate in the frequency range of 50MHz to 40GHz. The device output power is adjustable, and can be optimized to operate in any signal application. The internal Microstrip balun design offers excellent return loss and signal integrity, enabling a microwave signal transmission with minimal distortion.

Conclusion

The NE68033-T1B-R44-A is a high-reliability MMIC that utilizes an N-type MESFET technology to offer excellent performance with low noise and high power output. It is designed for use in wide range of applications, such as mobile phones, mobile equipment and base stations. The device features a bidirectional low noise amplifier, designed to operate in the frequency range of 50MHz to 40GHz. The internal Microstrip balun offers additional signal integrity and excellent return loss, providing microwave signal transmission with minimal distortion.

The specific data is subject to PDF, and the above content is for reference

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