NE68018-T1-A Allicdata Electronics
Allicdata Part #:

NE68018-T1-A-ND

Manufacturer Part#:

NE68018-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343
More Detail: RF Transistor NPN 10V 35mA 10GHz 150mW Surface Mou...
DataSheet: NE68018-T1-A datasheetNE68018-T1-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 10.2dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Description

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The NE68018-T1-A is an RF transistor device, belonging to the Bipolar Junction Transistor (BJT) family. It offers small signal operation and low noise characteristics, making it suitable for a wide range of applications. This article will provide a brief overview of the NE68018-T1-A application field and working principle.

The NE68018-T1-A is a NPN type device, meaning it is comprised of two n-type and one p-type semiconductor material. This configuration allows it to behave like a switch, controlling the flow of electrical current from base to collector. As such, the NE68018-T1-A is used in many different types of applications, including amplifiers, receivers, modulators, oscillators, mixers, and power supplies. The device is highly stable under a wide range of operating conditions, making it suitable for use in many different types of RF circuits.

The working principle behind the NE68018-T1-A is fairly simple. When a voltage is applied between the base and emitter terminals, then the current will start to flow from the emitter to the base. At the same time, the current will also flow from the base to the collector. Due to the coupled action between the NPN transistors, a current gain is achieved. In addition, the device is able to produce Electrical Noise Factor (ENF), which improves the signal-to-noise ratio of the circuit.

In terms of its physical characteristics, the NE68018-T1-A is a fairly small device, measuring only 2.3mm in length and 1.7mm in width. The device is available in two different version: TO-220 and SOT-89. It has a maximum collector current of 0.25 Amp and a maximum collector-emitter voltage of 70V. In addition, it can operate within an ambient temperature range between -40 to +125 degrees Celsius.

Finally, the NE68018-T1-A is a highly versatile device. It is capable of providing excellent performance in many RF-related applications. It can provide excellent noise immunity, stability, and reliability. Moreover, its low power consumption and small size make it well suited for use in many different types of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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