NE68819-T1

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The NE68819-T1 is a high-performance, high-frequency, small-signal field-effect transistor (FET) that is designed for radio frequency (RF) applications. It is a bipolar junction transistor (BJT) device and is optimized for RF performance in the 10 kHz - 10 GHz frequency range, making it suitable for a wide range of applications, ranging from linear amplifiers to oscillators and power amplifiers. The NE68819-T1 has two independent, self-biased sources, which are designed to operate from a single +8V power supply, simplifying component design and reducing component count. It also provides excellent signal-to-noise ratios and high gain and power.

The NE68819-T1 utilizes a unique dual-gate FET architecture that provides enhanced linearity and signal-to-noise performance. It features an active source design which helps to reduce the common-source inductance and provide higher gain, while the double-gate structure provides better voltage control of the FET’s current conduction, allowing for more efficient operation at higher frequencies.

The NE68819-T1 is an ideal solution for radio frequency applications such as linear amplifiers, oscillators, and high frequency power amplifiers, due to its excellent signal-to-noise ratio and high gain. It is designed to be used in unipolar and bipolar operation, making it suitable for a variety of design configurations. It also offers a wide range of operating frequencies, from 10 kHz to 10 GHz, and a low distortion ratio, making it suitable for use in digital and analog radios as well as RF amplifiers.

The operating principle of the NE68819-T1 is based on the fact that when a voltage is applied to the gate (G1), it creates an electric field that attracts free electrons in the device and creates a voltage bias on the gate (G2), which controls the current. Conversely, when a voltage is applied to G2, it creates a reverse electric field that attracts holes, providing an alternate path for current conduction. Both gates must be biased in order for current to flow in the device, making it suitable for use in unipolar and bipolar circuits.

In addition to its high performance, the NE68819-T1 operates on a single power supply, providing increased efficiency and reliability compared to dual-supply transistors. It also features a wide range of temperature ranges, from -25 to +150 degrees Celsius, making it suitable for a variety of applications. The NE68819-T1 is available in a compact, space-saving package, making it well suited for use in small, portable devices.

In summary, the NE68819-T1 is a high-performance, high-frequency, small-signal field-effect transistor (FET) that is designed for radio frequency (RF) applications. Its unique active source design and double-gate structure provide enhanced linearity, signal-to-noise performance, and efficient operation at higher frequencies, making it an ideal solution for radio frequency applications such as linear amplifiers, oscillators, and high frequency power amplifiers. Additionally, it is designed to operate from a single +8V power supply, simplifying component design and reducing component count, and it is available in a compact, space-saving package.

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