NE68039-A

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NE68039-A is a type of bipolar junction transistors (BJT) specifically designed for radio frequency (RF) applications. It is made up of a single high power device in one package, giving it superior electrical characteristics when compared to a standard two-transistor configuration. Its superior performance makes it the ideal choice for applications such as high power amplification, low noise applications and wide band RF amplifiers. In this article we will take a look at the NE68039-A’s application field and working principle.

Application Field

NE68039-A is designed for a wide range of RF applications. These include high power amplification, low noise applications, wide band RF amplifiers, and switch driver stages. It is also suitable for applications requiring large signal distortionless power amplifiers and high power filters.

When it comes to high power amplification, NE68039-A provides superior performance in terms of noise, linearity, harmonic distortion, and switching. It is also highly immune to interference from other signals, making it an ideal choice for applications where large dynamic range is required.

NE68039-A also has superior low noise characteristics, making it the ideal choice for applications such as RF transceivers and low noise amplifiers. This makes it the perfect choice for systems that require low correlation of noise between devices, as well as optimizations of adjacent channel power.

Finally, NE68039-A is suitable for switch driver stages, where it provides excellent gain, power and gain flatness, as well as superior isolation and switching speed.

Working Principle

NE68039-A utilizes the principle of bipolar transistors to amplify an AC signal. This type of transistor works by controlling the current flow between two terminals, the base and the collector. When a voltage is applied to the base, the current starts to flow across the transistor, amplifying the signal at the collector.

The gain of the transistor is determined by the ratio of current flowing through the collector versus the current flowing through the base. Generally, the higher this ratio the higher the gain, allowing for greater amplification. This means that transistors in the NE68039-A range are able to provide exceptionally high gain levels, making them ideal for RF applications that require a high level of amplification.

Another key feature of the NE68039-A is its low noise figure. This is due in part to the fact that the NE68039-A transistors are field-effect transistors, which utilize a large gate capacitance instead of the traditional junction-gate capacitance of bipolar transistors. This allows the transistor to have less noise, providing an exceptionally low noise figure.

Moreover, NE68039-A transistors are also highly robust and reliable, making them suitable for difficult or demanding applications. This is due to the fact that the transistors feature enhanced passivation for improved long-term reliability and improved breakdown voltage.

Finally, NE68039-A transistors feature a wide operating temperature range, making them suitable for applications where temperature can fluctuate due to external conditions. This is due to their exceptional temperature range of -40°C to +125°C.

Conclusion

NE68039-A is a type of bipolar junction transistors specifically designed for radio frequency applications. It is ideal for a wide range of RF applications, such as high power amplification, low noise applications, wide band RF amplifiers, and switch driver stages. This is due to its superior performance, low noise figure, reliable and robust design, and wide operating temperature range.

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