NE68118-T1-A Allicdata Electronics
Allicdata Part #:

NE68118-T1-A-ND

Manufacturer Part#:

NE68118-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343
More Detail: RF Transistor NPN 10V 65mA 9GHz 150mW Surface Moun...
DataSheet: NE68118-T1-A datasheetNE68118-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 14dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Description

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NE68118-T1-A is an RF bipolar junction transistor (BJT) that is suitable for use in a variety of applications. Its high-frequency operation and superior dynamic performance make it a popular choice for applications that require high-performance, low-noise signal amplification. The NE68118-T1-A is also capable of providing a wide range of gain and bandwidth characteristics.

The NE68118-T1-A is generally considered to be a low-noise transistor, due to its low base-collector capacitance. This low capacitance translates into better handling of higher frequencies and more efficient signal processing. Additionally, its relatively low base-emitter voltage makes it ideal for low-noise applications, such as short-distance reception. The NE68118-T1-A is available in E- and K-grades, allowing it to be optimized to the exact specifications of the desired application.

The NE68118-T1-A’s working principle is based on the flow of electrons within the transistor’s three terminals, or junctions. When a current is applied to the base terminal, electrons are injected into the base-collector junction where they accumulate, creating a voltage. This voltage is then used to control the current flow in the collector-emitter junction, resulting in the desired amplification effect.

The NE68118-T1-A has a wide range of potential applications, ranging from receivers and detectors to amplifiers and oscillators. It is commonly used in applications such as automotive and telecommunication systems, as well as industrial and medical devices. Due to its low noise performance, it is also suitable for use in radar systems and avionics.

In conclusion, the NE68118-T1-A is a versatile RF transistor that can provide excellent amplification and dynamic performance, making it a popular choice for a variety of applications. With its low noise performance and wide range of gain and bandwidth characteristics, the NE68118-T1-A is a reliable and efficient solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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