NE68139-T1 Allicdata Electronics

NE68139-T1 Discrete Semiconductor Products

Allicdata Part #:

NE68139TR-ND

Manufacturer Part#:

NE68139-T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANS NPN 1GHZ SOT-143
More Detail: RF Transistor NPN 10V 65mA 9GHz 200mW Surface Moun...
DataSheet: NE68139-T1 datasheetNE68139-T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Base Part Number: NE68139
Description

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The NE68139-T1 is an RF bipolar junction transistor (BJT). It is the first of its kind. The device is built to the highest standards, making it extremely efficient and durable. In fact, it is rated to have a maximum junction temperature of over 150 degrees Celsius! This is nearly four times higher than the operating temperature of standard transistors.

The NE68139-T1 is designed for applications where a high gain, low noise and wide bandwidth are necessary, such as RF amplifiers and mixers. Furthermore, the device is very well suited for use in modulators, amplifiers and receivers. The device operates on a wide range of frequencies and is capable of withstanding high levels of power.

The NE68139-T1 is composed of an NPN (negative-positive-negative) type of bipolar transistor. It consists of three terminals; the base, collector and emitter. By controlling the current into the base, the current flow through the collector/emitter can be regulated, thus amplifying the input signal. In other words, the NE68139-T1 acts as an amplifier.

The NE68139-T1 is a high voltage and high current device that is based on a high frequency architecture. It has the ability to operate at up to 1 GHz and is capable of continuous wave (CW) and single-ended applications. The device also demonstrates high current compression and high gain, which makes it very efficient, especially at high power levels. Furthermore, it offers very low operating noise levels, making it suitable for high speed, low noise applications.

It is worth noting that the NE68139-T1 is RoHS compliant. This means that it does not contain any hazardous materials or toxins and is safe for use in the industry. This is increasingly important as the electronics industry moves towards greener and more sustainable practices.

Overall, the NE68139-T1 is an impressive device. It is ideal for use in RF amplifiers and mixers, modulators, amplifiers and receivers. It has consistently high performance levels and is capable of withstanding high levels of power. Furthermore, it is RoHS compliant and very efficient. The NE68139-T1 is a device that can be trusted in the most demanding applications that require low noise, high gain and wide bandwidth.

The specific data is subject to PDF, and the above content is for reference

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