NE68030-T1 Discrete Semiconductor Products

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NE68030-T1 is a type of bipolar transistor. It is a radio frequency (RF) bipolar junction transistor (BJT) specially designed for use in a wide variety of radio-frequency (RF) and microwave applications. This high performance device features an extremely low noise floor, low distortion, and high gain, making it an ideal choice for a variety of devices, such as amplifiers, oscillators, modulators, and switches.

The NE68030-T1 is made up of a high power NPN transistor, with a maximum power dissipated of 30W and operating temperature range of -55°C to +150°C. The device features a maximum output power of 6.5dBm, a gain of 10dB, and a low noise figure of 1dB. It is constructed in a leadless external cermet package, which helps to reduce its overall size and weight.

The NE68030-T1 is extremely versatile and can be used for a number of different applications. On the RF and microwave side, it can be used in amplifiers, oscillators, switches, and even as a source for radio frequency interference (RFI) suppression. It is also suitable for use in frequency triplers, power splitting circuits, and low noise amplifiers (LNAs), and can be used to create custom pre-distortion and linearization circuits, as well as coaxial and waveguide filters.

In terms of the working principle of the NE68030-T1, it utilizes the same basic concept as other bipolar transistors. It is comprised of a base, emitter, and collector. When a potential difference is applied between the base and emitter, it creates an electric field in the transistor which leads to the production of current. This current is then amplified by the collector and passed on to the output.

The NE68030-T1 provides a wide range of advantages for users. Its low noise figure and high gain provide improved performance compared to other transistors. Its ability to be used in a variety of applications, from RF and microwave circuits to custom pre-distortion and linearization circuits, makes it a highly flexible device. It is also available with a number of different package sizes and options, allowing it to be used in a wide range of applications. In addition, it can operate with a maximum voltage of up to 500V, offering a higher power capability compared to other transistors.

The NE68030-T1 is a highly versatile transistor with a broad range of applications in RF and microwave circuits. Its high gain, low noise figure and convenient size provide enhanced performance capabilities compared to other transistors. With its versatile usage, flexibility and power capability, it is a great option for a number of different applications.

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