NE68030-T1-A Discrete Semiconductor Products

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The NE68030-T1-A is a high-performance silicon NPN epitaxial planar bipolar transistor designed for use in RF applications. It is designed for use in a wide range of applications, such as RF transmitters, mobile communication systems, and cellular baseband modems. The NE68030-T1-A features an improved power handling capability and higher gain compared to previous generation RF transistors. The transistor also includes a unique and advanced feature set that have been designed to optimize performance and minimize design time.

The NE68030-T1-A is a monolithic NPN bipolar junction transistor (BJT), suitable for Class AB and AB linear amplifiers. It is available in a metal-ceramic hermetically sealed SOT-343 package. The transistor has a Pd (Power Dissipation) rating of 100 W and an Io (DC Output) rating of 10A SOA (Shifts of the Output Impedance). The transistor is also designed to handle higher frequencies up to 2.4GHz. The NE68030-T1-A is designed for high-power linear applications such as RF amplifiers, high-linearity modulators, and mixers.

The working principle of the NE68030-T1-A is based on two bipolar transistors connected in a Darlington configuration. The two transistors, connected in a common-base configuration, form the input stage of the amplifier. The base-emitter junction of the first transistor (the input stage transistor) is driven by a voltage source, thus providing a variable input impedance. The collector of the first transistor is connected to the base of the second transistor which is biased by the emitter supply. The resulting output of the second transistor is a voltage that is proportional to the input voltage.

The NE68030-T1-A is designed for use in a wide variety of applications. In RF applications, its high-power capability and high-frequency handling capability makes it ideal for use in RF transmitters and cellular baseband modems. It is also suitable for use in high-linearity modulators for use in applications such as military communications and GPS systems. In addition, the NE68030-T1-A is suitable for use in power amplifiers, power oscillators, switching circuits, and other linear applications.

In summary, the NE68030-T1-A is a high-performance silicon NPN epitaxial planar bipolar transistor designed for use in RF applications. It has a unique and advanced feature set that have been designed to optimize performance and minimize design time. It is suitable for use in a wide variety of applications, including RF transmitters, mobile communication systems, and cellular baseband modems. The working principle of the NE68030-T1-A is based on two bipolar transistors connected in a Darlington configuration. It is designed for use in power amplifiers, power oscillators, switching circuits, and other linear applications.

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