NE68019-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	10GHz
Noise Figure (dB Typ @ f):	1.9dB @ 2GHz
Gain:	9.6dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523
Base Part Number:	NE68019

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The NE68019-A is an N-Channel enhancement mode field effect transistor (FET) designed to operate in the frequency range of DC to 110GHz. It is optimized for high performance and low noise and power consumption, making it an ideal choice for use as a RF (radio frequency) amplifier in communications, industrial, automotive, and consumer applications.The NE68019-A is a small-signal transistor, meaning it amplifies small electrical signals without introducing too much noise or power consumption. It is an enhancement mode FET, which means that the transistor is normally in the off state and is activated only when the gate voltage is increased. This transistor is typically operated at a supply voltage of 50V, or less, and draws a very small amount of current, making it well suited for both low-power systems and high-power applications. The NE68019-A is also capable of withstanding high temperature operating conditions and is available in both surface mount and through-hole packages, making it suitable for space-constrained environments. The NE68019-A is a two terminal device, consisting of a gate and a drain. The gate is the input terminal, which is used to control the drain current. An external bias voltage (Vgs) is applied to the gate and this sets the transistor in either an "on" or "off" state. When Vgs is below the threshold voltage (Vth), the transistor is off and no current flows through it. As Vgs increases above Vth, the transistor turns on and a drain current (Id) flows between the drain and source terminals. This is the amplification stage of the transistor, and depending on the value of Vgs, the current through the drain is proportional to the signal voltage applied at the gate. The NE68019-A is also able to operate at very high-frequencies, making it suitable for radio frequency (RF) applications. In an RF amplifier, the signal from an antenna is applied to the gate of the transistor and the resulting amplified signal is then output from the drain. This is a relatively simple process that can be used to increase the signal strength of a radio frequency signal. The NE68019-A is used in a variety of applications, such as digital television, Wi-Fi signals, satellite communication systems, and satellite navigation systems. It is also used in industrial and automotive applications, including automotive audio systems. In general, the NE68019-A is used as a RF amplifier for high power, low noise, and low current applications. In conclusion, the NE68019-A is an N-Channel enhancement mode field effect transistor (FET) designed for use in a variety of electronic and communication systems. It is an ideal choice for use as a RF (radio frequency) amplifier, due to its low noise and power consumption, high frequency capabilities, and ability to operate at high temperature conditions. The transistor is a two terminal device, consisting of a gate and a drain, and is activated by the application of an external bias voltage (Vgs). The Ne68019-A is used in a variety of applications, such as digital television, Wi-Fi signals, satellite communication systems, and automotive audio systems.

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