NE68530-T1-A Allicdata Electronics

NE68530-T1-A Discrete Semiconductor Products

Allicdata Part #:

NE68530-ATR-ND

Manufacturer Part#:

NE68530-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 2GHZ SOT-323
More Detail: RF Transistor NPN 6V 30mA 12GHz 150mW Surface Moun...
DataSheet: NE68530-T1-A datasheetNE68530-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: 7dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: NE68530
Description

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The NE68530-T1-A is a high-performance radio-frequency transistor that is used for a wide range of applications. This type of RF device is categorized as a bipolar junction transistor (BJT). It is a high-voltage, wide-bandwidth BJT that can provide high gain, high levels of linearity, and efficient operation. Though it is designed for operation in the 700 MHz to 1000 MHz range, it can be adapted for use at lower and higher frequencies. This makes it a great choice for many different applications where RF power is required.

To understand the NE68530-T1-A\'s performance capabilities, it is important to understand its basic working principle. This type of transistor is a three-terminal device that is designed to amplify or generate signals with high frequency. These devices use modifications to the traditional transistor design that allows for higher-frequency operation, as well as improved linearity. The three terminals operate similarly to the traditional transistor, but operate at radio frequencies instead of being restricted to lower frequencies.

The NE68530-T1-A has a variety of possible applications. It is used in many radio and communication equipment, such as cellular base stations, RF transmitters and receivers, radios, and Wi-Fi devices. It can also be used for broadcast and transmission systems, such as satellite communications. This type of transistor is also well-suited for radio-frequency amplifiers, which are used to amplify weak signals before they are sent to an antenna in order to achieve improved communication performance.

The NE68530-T1-A is designed to operate at high frequencies with a high level of linearity. It has a high power gain of 10 dB, along with an efficiency rating of 50%, which helps to conserve power. This type of transistor is also capable of providing high-power output, making it a great choice for applications where the highest levels of performance are needed.

Overall, the NE68530-T1-A is an excellent choice for a variety of radio-frequency applications. This type of transistor is capable of operating at high frequencies, providing high levels of linearity and efficiency, and offering high-power output. It is also suitable for many different applications, including cellular base stations, Wi-Fi devices, radio transmitters, and broadcast systems. With its high performance capabilities, the NE68530-T1-A is an excellent choice for radio-frequency operations.

The specific data is subject to PDF, and the above content is for reference

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