NE68139-T1-A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	13.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 8V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143
Base Part Number:	NE68139

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The NE68139-T1-A is an NPN wafer transistor developed specifically for the radio frequency (RF) technology. It is a type of bipolar junction transistor (BJT), which is commonly used for amplifying and switching signals or currents in RF applications. The NE68139-T1-A is particularly suitable for use in high frequency applications such as radio transmitters, amplifiers, and receivers.The NE68139-T1-A transistor has an 8-pin metal header, which is designed for surface mount applications. This transistor consists of a metal-oxide semiconductor field-effect transistor (MOSFET) and a metal-semiconductor field-effect transistor (MESFET). The MOSFET acts as the collector, while the MESFET serves as the emitter.The working principle of the NE68139-T1-A involves controlling the current flow between the collector and emitter by applying a voltage to the gate. This voltage is referred to as the bias voltage. When the bias voltage is applied, the electrons in the channel between the source and drain are attracted, thus creating a channel in which current can flow. This current is regulated by the gate voltage, which can be adjusted to vary the amount of current flowing through the transistor.The NE68139-T1-A transistor has an extremely low noise figure and an excellent linearity, making it suitable for use in a variety of RF applications. It also has a high breakdown voltage and wide dynamic range, allowing it to be used for high frequency applications. Its low power consumption and fast switching time also make it ideal for use in high frequency applications.Due to its high performance and low power consumption, the NE68139-T1-A transistor is ideal for use in a wide range of RF applications. It is commonly used in radio frequency applications such as amplifiers, transmitters, and receivers. In addition, the NE68139-T1-A transistor is also used in mobile devices and military applications.The NE68139-T1-A transistor is a versatile device that is suitable for a wide range of RF applications. It has a high performance and low power consumption, making it ideal for use in high frequency applications. It also offers a wide dynamic range and an excellent linearity, allowing it to be used in a variety of RF applications. Due to its excellent performance, the NE68139-T1-A is a popular choice for manufacturers of RF devices.

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