NE68039R-T1-A Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE68039R-T1-A is a NPN silicon RF transistor from the junction transistor category, specifically from the bipolar junction transistor (BJT) family. It is an epitaxial planar npn transistor designed as a medium power amplifier and switch requiring collector currents up to 300 mA. This transistor is also well suited for applications requiring very high gain and high frequency operation.

The NE68039R-T1-A has an average current gain of 40 and a power gain of 11. It has an operating frequency of 300 MHz. The maximum DC current gain of this transistor is 45 and voltage of the collector-emitter breakdown is 60V. The maximum collector-base voltage is 75V, while the base-emitter voltage is 5V. The maximum collector current of this kit is 300mA, while the collector power dissipation is 700mW. The minimum collector-emitter saturation voltage is 0.3V.

This transistor exhibits a fast switching speed which is ideal for both low-frequency and high-frequency radio applications. It is also suitable for high-speed switching applications such as in digital circuits, RF circuits, and antenna systems. The NE68039R-T1-A features a low noise output and high gain, which makes it ideal for applications such as class AB amplifiers, pre-amplifiers, CATV amplifiers, and base station amplifiers.

The working principle of the NE68039R-T1-A consists of two main parts: the base and the emitter. The emitter is the source of the electrons, while the base is the gate that controls the flow of the current. As current is applied to the base terminal, the electrons are attracted to the collector terminal. This allows a current to flow through the transistor and allows the circuit to be turned on or off.

The NE68039R-T1-A is designed to withstand high temperatures and is highly reliable in both harsh and mild environments. This transistor can be used in many different applications, including in radio, audio, and power amplifiers, as well as in automotive electronics. This transistor is also used in communication systems and in RF antenna-dependent applications such as GPS.

The NE68039R-T1-A is an excellent choice for applications requiring high performance and reliability. It is an ideal choice for applications that require high gain, fast switching, and high frequency operation, such as radio and audio amplifiers, CATV amplifiers, and base station amplifiers. With its fast switching speed and low-noise output, this transistor can be counted on to deliver reliable performance in any type of application.

The specific data is subject to PDF, and the above content is for reference