NE68139-A

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The NE68139-A is a high performance low-noise bipolar transistor manufactured with a silicon epitaxial planar process, designed for radio frequency (RF) amplifier applications with frequencies ranging from 120 MHz to 1.8 GHz. With a wide operating range and high gain, the NE68139-A bipolar transistor is well suited to meet the requirements of a range of applications, such as cellular telephones, pagers and RF transmitter receivers.

The NF68139-A is designed to provide optimal electrical performance using any type of bias configuration. The device features a 7-pin SOIC package with a common gate pin arrangement for both the input and output. The N-type MOS gate houses a translinear circuit, allowing it to operate at frequencies between 2MHz and 1.8GHz.

The NE68139-A is specifically engineered to provide high linearity and low noise figure in Class-AB, Class-C and Class-D amplifiers. It has an input resistive voltage noise of 0.5 nV/rtHz, which provides the ultra-high gain and low noise characteristics that are needed for RF amplification. In combination with its high gain-bandwidth product, the device is well suited to improve the overall performance of an RF amplifier.

The NE68139-A utilizes a common-source circuit in its output stage. The device\'s common-gate input allows the input current to directly determine the output current, allowing the device to operate at frequencies between 120MHz up to 1.8GHz. Its total harmonic distortion is typically less than 0.2% over its frequency range. This amplifier also features low-level output noise, a low input impedance of only 7Ω and a high output impedance of 14kΩ. The device can be biased using either a resistive source or a voltage source.

The NE68139-A transistor is designed to operate with an op-amp or voltage regulator in a current feedback configuration. This allows the device to adjust its small-signal gain to better control input signals, while still providing more than adequate gain at lower frequencies. The high quality and reliability of this device allow it to be used in a wide range of radio frequency applications.

Overall, the NE68139-A is designed as an all-purpose bipolar transistor for radio frequency applications. Its low noise figure, high gain-bandwidth product, and wide operating range make it an ideal choice for improving the overall performance of an RF amplifier. This device is specifically engineered to provide high linearity and low noise figure in Class-AB, Class-C and Class-D amplifiers. With its ability to be biased using either a resistive source or a voltage source, the NE68139-A is a great choice for any RF application.

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