NE68133-T1B-A Allicdata Electronics

NE68133-T1B-A Discrete Semiconductor Products

Allicdata Part #:

NE68133-T1B-ATR-ND

Manufacturer Part#:

NE68133-T1B-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-23
More Detail: RF Transistor NPN 10V 65mA 9GHz 200mW Surface Moun...
DataSheet: NE68133-T1B-A datasheetNE68133-T1B-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: NE68133
Description

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The NE68133-T1B-A is a type of field effect transistor (FET). It is an N-channel enhancement-mode FET designed for use in application-specific radio frequency (RF) applications. In general, FETs are components that act as switches, allowing or blocking current depending on the direction and magnitude of the applied voltage.

The NE68133-T1B-A is a high-frequency, metal-oxide-semiconductor FET (HF-MOSFET) designed for use in high-speed, high-temperature operations. It has a low gate-to-source capacitance and a low gate-resistance, allowing it to run faster than standard FETs. It also has a high input impedance and is able to handle high current levels. Additionally, it has a high gain, which makes it well suited for amplifier applications.

The NE68133-T1B-A is capable of operating up to 1 GHz and is well suited for use in applications such as cellular base transceiver stations, RF amplifiers, and wideband switching applications, among others. The device has a wide operating temperature range of -40 to +85 degrees Celsius. It also features a low operating voltage of just 6 to 12 volts and a low power consumption of only 50 milliwatts.

In terms of its working principle, the NE68133-T1B-A works by having a gate placed between the source and drain of the N-channel, where a voltage is applied. When the gate voltage is increased, electrons near the gate are attracted toward it, resulting in an increased current flow. The amount of current that flows depends on the amount of voltage applied. When the voltage is reduced, the electrons are released, turning off the current flow. The NE68133-T1B-A is constructed with a heavily doped N-type semiconductor material, making it a fast-switching type of FET.

In conclusion, the NE68133-T1B-A is a high-frequency, high-temperature, low-power FET designed for use in RF applications. Its high gain and low capacitance enable it to work at high speeds, while its low power consumption makes it a good choice for applications with tight power budgets. Additionally, its wide operating temperature range and low operating voltage make it a reliable and versatile component for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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