NE68139R-T1-A Discrete Semiconductor Products

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NE68139R-T1-A is an automated two-stage, high-performance bipolar transistor designed for use in radio frequency (RF) and microwave applications. As an RF component it is used in a variety of applications such as amplifiers, oscillators, and high-frequency signal-processing circuits. It is the latest in a long line of NE68139 transistors, boasting improved performance and increased stability while maintaining the same small footprint as its predecessor.

The NE68139R-T1-A is fabricated out of a Silicon Germanium (SiGe) and Silicon (Si) epitaxial substrate, resulting in improved performance and higher stability than traditional silicon-based transistors. The device uses a circuit topology that consists of a “grounded emitter” and “floating-collector” configuration, enabling the NE68139R-T1-A to operate at higher frequencies and provide better signal linearity across its wide frequency range. The NE68139R-T1-A also features an optimized power and linearity trade-off, allowing it to achieve high signal gains and linearity without consuming too much power, making it an ideal choice for RF power amplifiers.

The NE68139R-T1-A’s ground emitter configuration is further augmented by the use of a patented “quasi-grounded emitter” design, which effectively increases the transistor’s gain by up to 15% without sacrificing power efficiency. This quasi-grounded emitter technology also eliminates drift associated with conventional emitter withstanding schemes, ensuring consistent and predictable performance over the transistor’s life.

The NE68139R-T1-A also features an integrated voltage-stable current source (VSC) and an improved protection mechanism, both of which reduce the chance of the transistor incurring damage due to excessive current or power dissipation. Both features are controlled via the integrated control interface. On-chip compensation networks are also provided to ensure performance stability over wide temperature ranges.

In general, the NE68139R-T1-A is a reliable, high-performance RF bipolar transistor with exceptional RF characteristics. Its low power consumption, excellent linearity, wide operating range, and unmatched stability make it ideal for a variety of RF and microwave applications. It is especially well-suited for use in communications, military and aerospace, radar, and consumer electronics applications in which reliability and performance is key.

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