NE68019-T1-A Allicdata Electronics

NE68019-T1-A Discrete Semiconductor Products

Allicdata Part #:

NE68019-T1-ATR-ND

Manufacturer Part#:

NE68019-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-523
More Detail: RF Transistor NPN 10V 35mA 10GHz 100mW Surface Mou...
DataSheet: NE68019-T1-A datasheetNE68019-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.6dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: NE68019
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NE68019-T1-A is a type of Bipolar Junction Transistor (BJT), specifically in the Radio Frequency (RF) category. It is commonly used in all kinds of RF applications, such as in amplifiers, oscillators, RF receivers, and RF filters.

BJTs are a type of three-terminal semiconductor devices, consisting of two PN- junctions formed between an emitter, base and collector. PNP-type transistors are the opposite of NPN-type transistors, and they work in the same way. NPN-type BJTs like NE68019-T1-A require a small amount of current to the base, causing a larger current to flow from collector to emitter. PNP-type BJTs require a small amount of current to the base, causing a larger current to flow from emitter to collector.

NE68019-T1-A\'s construction and materials make it a great choice for RF applications. Its structure consists of a N-type and P-type semiconductor in the base and collector respectively. The N-type semiconductor is made of aluminum and the P-type semiconductor is made of germanium. Both of these materials allow very high RF switching speeds with low power consumption. Another great feature of NE68019-T1-A is its wide frequency range; it can operate from 300 MHz to 3000 MHz, which makes it suitable for many different types of RF applications.

NE68019-T1-A works by allowing a small current to flow through the base and collector, which then causes a larger current to flow from collector to emitter. The current flowing through the collector and emitter is then used to amplify the signal that enters through the base. This amplified current then passes from the collector to the emitter.

NE68019-T1-A can be used for a wide range of RF applications, including amplifiers, oscillators, RF receivers, and RF filters. It is highly efficient and can be used for low-noise applications, as well as for high-power applications. It is also a suitable choice for many forms of RF communications and can be used in the construction of a number of electronic products.

In conclusion, NE68019-T1-A is a great Bipolar Junction Transistor (BJT), specifically in the Radio Frequency (RF) category. It is best used in all kinds of RF applications, such as amplifiers, oscillators, RF receivers, and RF filters. Its construction and materials make it suitable for RF applications, and it can operate in the range of 300 to 3000 MHz. Furthermore, it is highly efficient and can be used for low-noise applications and high-power applications.

The specific data is subject to PDF, and the above content is for reference

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