NE68033-A Allicdata Electronics
Allicdata Part #:

NE68033-A-ND

Manufacturer Part#:

NE68033-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-23
More Detail: RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mou...
DataSheet: NE68033-A datasheetNE68033-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: NE68033
Description

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The NE68033-A is a high performance transistor developed by Panasonic. It is a voltage-controlled bipolar insulated gate transistor with a high input/output impedance ratio, low noise figure and good linearity characteristics. It is designed for use in radio frequency (RF) applications such as high frequency amplifiers and transceivers, frequency doublers and splitters.The NE68033-A is a highly efficient device for RF applications. It has a high input/output impedance ratio and can achieve a gain of up to +20 dB without any additional components. It also has a low noise figure and can be used for low-noise amplifier and receiver applications.The NE68033-A is a high power device and can handle up to 5 amperes of current with a maximum voltage rating of 50 volts. It has a power dissipation of 120 watts and a peak collector current of 8.5 A. It has a switching frequency of 300 MHz and can operate at a maximum frequency of 1 GHz.The NE68033-A is constructed of a PN-junction technology, the same technology used in other insulated gate transistors. This technology allows the device to maintain a high input/output impedance ratio while maintaining a large dynamic range. The device also has a low saturation voltage, which enables it to be used in high power applications. Additionally, the device has a low dissipation factor and can operate in temperatures up to 125°C.The NE68033-A is also designed to be used in high reliability applications. It is manufactured with a protective dielectric layer that helps to protect against electromagnetic interference (EMI). The device also has a low leakage current, which helps to reduce power loss. Additionally, the device has a high switching speed, making it ideal for high speed applications.The NE68033-A is a bipolar insulated gate transistor that is mainly used in high performance RF applications. It offers high input/output impedance ratio, low noise figure, good linearity characteristics, and a high power rating. It is ideal for high frequency amplifiers, transceivers, frequency doublers, and splitters. Additionally, the device is manufactured with a protective dielectric layer and a low leakage current to provide improved reliability in high performance applications.

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