NE68018-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	10GHz
Noise Figure (dB Typ @ f):	1.8dB @ 2GHz
Gain:	10.2dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 6V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343

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NE68018-A Application Field and Working PrincipleNE68018-A is a versatile transistor used in the fields of radio-frequency (RF) circuitry. The wide-ranging applications of this device make it well-suited for a variety of situations. This article will discuss the main application fields of NE68018-A, as well as its working principle and underlying technical characteristics. NE68018-A is a three-terminal device composed of two bipolar junction transistors (BJT). It has a wide range of use within the RF field, most notably its incorporation in low-noise amplifiers (LNA). LNAs are used to amplify signals while introducing as little noise as possible. They are especially important in situations where the surrounding environment is prone to signal interference. NE68018-A is also used in mobile and marine equipment, as well as in base stations, radio receivers and communications equipment.One of the advantages of NE68018-A is its easy integration with other components. This is because the transistor incorporates a special technology known as a matched transistor-pair. This technology allows a singlet to act both as an input and output device, allowing for a much easier integration with other components. Moreover, NE68018-A is highly efficient and operates better compared to standard transistors.In terms of its working principle, NE68018-A works by controlling the current between the base and collector. It uses two bipolar junction transistors to control the current’s flow, with the first transistor acting as an input device while the second transistor serves as the output device. By controlling the current between the base and collector, the transistor can effectively control the voltage and power of the circuit. This process is known as gain control, as it allows the NE68018-A to effectively control the current and voltage levels of the RF signal.Finally, NE68018-A offers a wide range of technical characteristics. The most important of which being its frequency range, which lies between 550 MHz and 1500 MHz. This allows for a wide range of uses, especially when dealing with high-frequency devices. Moreover, NE68018-A has a high gain control, offering a power gain of up to 28 dB. This in turn allows it to be used in more complex radio signals, such as mobile and marine equipment, radio receivers and more.In conclusion, NE68018-A is a versatile transistor designed for radio-frequency (RF) circuitry applications. It offers a wide range of advantages over standard transistors, most notably its easy integration with other components, and its use of a matched transistor-pair. On top of that, NE68018-A operates with a wide frequency range, and offers high gain control capabilities. These characteristics make the device ideal for use in RF-heavy applications, such as low-noise amplifiers and mobile and marine equipment.

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