NE68039R-T1 Discrete Semiconductor Products

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Bipolar junction transistors (BJTs) are an important type of transistor used for radio frequency (RF) applications. One such transistor is the NE68039R-T1, which is an advanced, low-power device, designed for mobile and consumer applications. This article will discuss the NE68039R-T1’s application field and working principle.

The NE68039R-T1 is a high-frequency, high-performance transistor. It is primarily used in mobile base station power amplifier design and consumer electronics applications, such as Wi-Fi, Cell phone, GPS, and RFID systems. The device is designed to provide low noise and power consumption without compromising its performance. It is also well-suited for a variety of other high-frequency, high-power applications, due to its low-voltage operation and high-gain current-feedback circuit.

The NE68039R-T1 is an NPN bipolar junction transistor operating over a wide frequency range from DC to 2.45 GHz. It features a wide common emitter gain band width of 4.3 GHz, low noise figure of 0.8 dB, high gain of 28 dB, and a high current rating of 3.2 A. The device is also designed to operate over wide voltage range from 2.7V to 8.5V, making it suitable for a variety of applications.

The NE68039R-T1 is constructed of an NPN epitaxial planar silicon structure. Its three terminals are labeled collector, base and emitter. When a voltage is applied to the base terminal, it controls the voltage of the collector terminal which results in current flow between the collector and the emitter terminals. The device is also equipped with an integrated ESD protection diode and ESD transistor discharge protection to ensure its stability.

The NE68039R-T1 is normally used in a current-feedback circuit configuration. This circuit employs a transformer and a pair of voltage clamp diodes to provide AC feedback of the output current. The voltage clamp diodes control the output current and provide stability to the device. The transformer is used to match the impedance of the output signal to the device\'s input impedance. The feedback of the output current is used to adjust the voltage of the base terminal, thus controlling the current gain of the device. The transformer also provides isolation from the device to ensure that no RF energy is lost or absorbed by the device.

Another advantage of the current-feedback circuit configuration is its ability to reduce the switching time of the device. This is achieved by adjusting the voltage of the base terminal to control the voltage at the collector terminal. By adjusting the base voltage quickly, the output current of the device can be switched quickly from low to high, thus enabling the device to switch faster.

In summary, the NE68039R-T1 is a high-performance, high-frequency transistor designed for mobile and consumer electronics applications. It features a wide common emitter gain band width, low noise figure, high gain, and wide voltage range. It is primarily used in mobile base station power amplifier design and consumer electronics applications. The device is also designed to operate in a current-feedback circuit configuration, which provides improved switching times, impedance matching, and ESD protection.

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