NE68119-T1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
Gain:	10dB ~ 14dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 7mA, 3V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	3-SuperMiniMold (19)
Base Part Number:	NE68119

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Introduction to NE68119-T1NE68119-T1 is a high frequency NPN bipolar junction transistor (BJT). It is specifically designed for radio frequency (RF) applications. It is manufactured by Nortek Electronics, a major semiconductor foundry in the U.S. The NE68119-T1 is a three-terminal semiconductor device which features low noise performance and high-gain linearity. This device is suitable for use in cell phone, GPS, and other small-size device applications.The NE68119-T1 is available in an array of packaged configurations. It offers leadless packages, surface mount packages, and pin feed packages. Furthermore, it offers a range of connectivity options such as wire-bonded and flip-chip. The pin configuration of the NE68119-T1 is a three-terminal device with the following inputs and outputs: collector, base, and emitter.Application Fields of NE68119-T1The NE68119-T1 has a wide range of applications in RF communication. It is an excellent choice for devices requiring both high gain and low noise performance. It is ideal for use in cell phones, GPS systems, and other small-size digital portable devices. It is also suitable for use in optical storage systems, digital video recorders, and digital cameras.The NE68119-T1 is most commonly used in base stations, mobile units, and digital signal processing applications. It is suitable for use in RF up converters for cellular radio systems, as well as for low noise amplifiers. It can also be used as a driver amplifier in GPS and LNB amplification circuits.Working Principles of NE68119-T1The NE68119-T1 operates on the principle of bipolar operation. It is based on two terminal junctions; NPN and PNP. The base-emitter region would be an NPN junction and the collector-base region would be a PNP junction. The amount of current (the collector current) that flows from the collector to the emitter is dependent on the voltage applied to the base.When the base voltage is increased, the base current (Ib) also increases, which in turn increases the collector current (Ic). Thus, the gain of the NE68119-T1 is proportional to the base current. The higher the base current, the greater the collector current and the higher the gain.The NE68119-T1 also features a low noise figure which helps to reduce the amount of noise generated by the device. This enables it to perform optimally in a variety of RF systems. The NE68119-T1 utilizes advanced fabrication techniques to reduce the size of the device and increase its efficiency.ConclusionThe NE68119-T1 is a three-terminal NPN high frequency bipolar junction transistor (BJT) designed for use in RF applications. It is suitable for use in both base stations and mobile units, as well as in optical storage systems, digital video recorders, and digital cameras. The NE68119-T1 offers excellent high gain and low noise performance, making it an ideal choice for a variety of RF systems. The device utilizes advanced fabrication techniques to reduce size and increase its efficiency.

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