NE68519-T1-A Discrete Semiconductor Products

Introduction

NE68519-T1-A is a high performance RF transistor, belonging to the bipolar junction transistor (BJT) family. It utilizes NPN architecture and is speficially designed for high frequency, linear-phase amplifier applications, as well as gain, band-width and noise level control. Its maximum frequency of oscillation stands at 8.4GHz, making it an ideal choice for VHF and UHF applications.

Working Principle

NE68519-T1-A functions on the principle of bipolar junction transistor. It comprises of three elements – emitter, base and collector. Therefore, the entire set up can be considered as a diamond like structure. In NPN architecture, the emitter is connected to the negative terminal, collector to the positive one and base is kept as the reference. The electric current travels between emitter and collector while a very small voltage is applied to the base, allowing a nearly constant current in the emitter.

When the applied voltage to the base increases, the current passing through the emitter also increases, thus giving an amplified output current. Consequently, the artibrary frequency and amplitude of the input signal can be amplified, forming output signals. At the same time, NE68519-T1-A helps in controlling both the gain and noise level, which are critical to the applications of this device.

Applications

NE68519-T1-A is particularly suitable for linear phase amplifier in UHF or VHF frequency applications. In addition, it can be applied to gain and noise level control for these frequencies. Typical applications for NE68519-T1-A are:

• Satellite communications
• Wireless local area networks (WLANs)
• Wi-Fi networks
• Digital broadcasting
• RFID applications

In addition to the above mentioned applications, NE68519-T1-A can also be used in any other application where high frequency, linear-phase and gain and noise level control are required.

Advantages

NE68519-T1-A has many advantages that make it a popular choice for RF applications. Some of them are:

• It is capable of achieving high frequency of oscillation up to 8.4GHz
• It is capable of maintaining linear-phase over its performance range
• It offers a high gain of 20dB
• It offers very low noise level of -117dB

Conclusion

NE68519-T1-A is a high performance RF transistor that can be used in various RF applications. Its maximum frequency of oscillation makes it an ideal choice for VHF and UHF applications. Moreover, it offers a high gain and low noise level, making it a preferred choice for many applications. With its wide range of advantages, NE68519-T1-A is the perfect solution for RF applications.