NE68119-T1-A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1.4dB @ 1GHz
Gain:	10dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 7mA, 3V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523
Base Part Number:	NE68119

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NE68119-T1-A Application Field and Working Principle

The NE68119-T1-A is an N-Channel low-noise RF silicon MOSFET transistor specifically designed for high-frequency OEM telecommunication applications, such as cordless telephone, cellular phone, wireless LAN, WiMAX base station, GSM, EDGE, UMTS, LTE and 5G. The NE68119-T1-A also has a fast switching speed, low gate-drain capacitance, excellent input match and fully-differential amplifier.In terms of application fields, the NE68119-T1-A is mainly used in radio-frequency switch applications, such as gain control and power amplifier. In addition, the NE68119-T1-A is also suitable for modulators, detectors, mixers, particularly for WCDMA/CDMA systems. The device is also used for low-noise amplifiers and low-voltage RF amplifiers in many different parts of the telecommunications infrastructure. The working principle of the NE68119-T1-A can be explained in two parts. This transistor is a depletion-mode MOSFET, which has a high output impedance and a low drain-source resistance when the gate voltage at the gate is below the gate threshold voltage. When the gate voltage is above the threshold voltage, the device will enter saturation. In saturation, the drain resistance is greatly reduced, and the device can efficiently conduct current between its drain and source, thereby providing a controllable path for the high-frequency signal. In the depletion mode, the device provides a high-impedance resistance, preventing any signal from transferring beyond the device. Since the threshold voltage for the MOSFET is determined by the gate to source voltage applied, the signal current is controllable when in saturation, enabling the device to be modulated as a switch. The NE68119-T1-A is characterized by its high bandwidth, low noise figure and low input match, making the device ideal for use in RF switch applications. The device also exhibits low power consumption, making it attractive for portable electronic devices. Furthermore, the transistor has a high output impedance, which ensures its stability over a wide input frequency range. Additionally, the transistor is built on a high insulation Si technology, making it resistant to voltage drops and other electrical disturbances. In addition to its numerous benefits, the NE68119-T1-A also has some drawbacks. The device is limited by its maximum operating temperature range of -55°C to +150°C. This limitation can be overcome by increasing the current level and voltage, however this may reduce the transistor’s lifetime and reliability. In conclusion, the NE68119-T1-A is a robust RF silicon MOSFET transistor specifically designed for high-frequency OEM telecommunication applications. It presents a low-noise and high-efficiency solution for RF switch applications, and is highly sought after for its reliability, ease of use and low power consumption.

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