NE68119-A Allicdata Electronics
Allicdata Part #:

NE68119-A-ND

Manufacturer Part#:

NE68119-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-523
More Detail: RF Transistor NPN 10V 65mA 7GHz 100mW Surface Moun...
DataSheet: NE68119-A datasheetNE68119-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 10dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: NE68119
Description

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The NE68119-A is a transistors of the bipolar (BJT) RF type. With its ability to transmit and receive radio frequency signals, it is often seen in use in applications that require efficient transmission and reception of radio frequency signals. In radio communication applications, it is used along with other radiofrequency transistors to form an efficient amplification and modulation system. It is also used in modulator systems and in certain communication systems that use PULSE modulation.

The NE68119-A is a two-stage RF transistor with a frequency range of 200 MHz to 400 MHz and a power gain of up to 16 dB at 300 MHz. It is based on a NPN transistor configuration and its maximum junction temperature is 125°C. It is designed for use in a variety of applications, especially in RF communication systems, that require reliable performance and high efficiency.

The NE68119-A works on the principle of current modulation. It has a collector-base junction that needs to be reversed biased in order to have current passing through it. By applying appropriate input signals, the switching action of the transistor allows current flow between collector and emitter. This in turn amplifies or modulates the input signal depending on the switch action. It is because of this feature that the NE68119-A is widely used in modulation circuits.

The NE68119-A is typically used in applications such as FM broadcast receivers, amateur two-way radios, broadcast transmitters, multichannel high frequency communication systems, mobile radio systems, and direct broadcast satellite systems. It is also used in radar systems, microwave communication systems and their associated components, as well as in antenna systems. It is capable of producing a power gain of 25 dB at 400 MHz and is suitable for use in a wide range of RF communication systems.

In addition to its use in RF communication systems, the NE68119-A is also used in analog switches, logic ICs and other electronic devices. It is well suited for use in digital audio systems, such as those found in modern music players. It is also used in power management systems and power control systems, such as those used in automotive and industrial applications. Thanks to its high efficiency and fast switching speed, it is also used in devices that require quick response times.

The NE68119-A is a reliable and efficient transistor that is popularly used in a variety of modern electronic applications. Thanks to its high power gain, it can be used to generate stable and reliable signals in a wide range of communication systems. With its wide range of applications, it is an ideal choice for anyone looking for an efficient and reliable RF transistor.

The specific data is subject to PDF, and the above content is for reference

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