Allicdata Part #: | NE68130-T1-R34-A-ND |
Manufacturer Part#: |
NE68130-T1-R34-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | SAME AS 2SC4227 NPN SILICON AMPL |
More Detail: | RF Transistor NPN 10V 65mA 7GHz 150mW Surface Moun... |
DataSheet: | NE68130-T1-R34-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.4dB @ 1GHz |
Gain: | 9dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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The NE68130-T1-R34-A is a transistor intended for use in radio frequency (RF) circuits. It is a type of bipolar junction transistor (BJT) that is used in a variety of applications, including amplifiers, oscillators, and RF amplifiers. This article will discuss the application field of the NE68130-T1-R34-A, its working principle, and other information.
The NE68130-T1-R34-A is a small signal transistor designed for use in RF circuits. It is a BJT that has been specially designed for use in RF applications. The device has a low noise figure and high gain, making it ideal for use in RF amplification applications. It is suitable for use in both digital and analog circuits and has an operating frequency range of up to 1.6 GHz. It is also capable of operation at power levels up to 400 mW.
The NE68130-T1-R34-A has a variety of applications in the field of RF circuits. It is commonly used as an amplifier, oscillator, or amplifier for frequency modulation (FM). It can also be used as a mixer for frequency shifting, or as an oscillator for different types of signals. The NE68130-T1-R34-A is also often used in analog television (TV) receivers, and has been used in several military and space applications.
The NE68130-T1-R34-A\'s working principle is based on the principle of current conduction within a diode junction. When a small external voltage is applied to the base of the diode junction, the electrons tunnel through the junction and create a current. This current is amplified by the transistor as it passes through the collector. This amplified current is then received by the output load, thus producing an amplified output signal. The strength of the output signal will depend on the amount of current flowing through the collector.
The NE68130-T1-R34-A is a high performance and reliable device, making it suitable for many different digital and analog circuits. The device is also cost effective and offers great value for money. Additionally, the NE68130-T1-R34-A is easy to use and requires minimal external circuitry, making it an ideal choice for those with limited knowledge of electronics.
The NE68130-T1-R34-A is a versatile and reliable BJT transistor, making it suitable for use in a variety of RF applications. It is capable of operation at power levels up to 400 mW, has a low noise figure, and is able to support frequencies up to 1.6 GHz. Additionally, it is easy to use and requires minimal external circuitry, making it a great choice for anyone looking for an RF amplification solution.
The specific data is subject to PDF, and the above content is for reference
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