NGTB20N60L2TF1G Discrete Semiconductor Products |
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Allicdata Part #: | NGTB20N60L2TF1G-ND |
Manufacturer Part#: |
NGTB20N60L2TF1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 20A TO3PF |
More Detail: | IGBT 600V 40A 64W Through Hole TO-3PF-3 |
DataSheet: | NGTB20N60L2TF1G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 64W |
Supplier Device Package: | TO-3PF-3 |
Package / Case: | TO-3PFM, SC-93-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Reverse Recovery Time (trr): | 70ns |
Test Condition: | 300V, 20A, 30 Ohm, 15V |
Td (on/off) @ 25°C: | 60ns/193ns |
Gate Charge: | 84nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.65V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
:Integrated Gate Commutated Thyristor (IGCT) is a high power semiconductor device used for controlling and managing high power DC and AC applications. The NGTB20N60L2TF1G is a high-speed, high-power IGBT switch used in many industrial applications. In this article, we will discuss the application field and working principle of NGTB20N60L2TF1G.The NGTB20N60L2TF1G is an 800V, 20A IGBT switch with a maximum power rating of up to 10 kW. It is designed to deliver high speed operation and high reliability. The NGTB20N60L2TF1G is ideal for applications that require extremely high switching speeds, high current carrying capacity and high voltage blocking capacity. These include industrial motor control, AC/DC power conversion, UPS, lighting control and renewable energy systems.The NGTB20N60L2TF1G is a single, four-terminal device, consisting of a transistor switch with an integrated gate driver. The gate driver houses two separate circuits, a low-side gate drive circuit and a high-side gate drive circuit. The low-side gate drive circuit controls the conduction of the anode while the high-side gate driver provides the voltage signal to the gate to control its conduction. The NGTB20N60L2TF1G\'s design allows for extremely fast switching, with a turn-on time of only 30 ns, a turn-off time of 100 ns, and a maximum DC blocking voltage of 800V. The low-side gate drive circuit is designed to ensure a smooth transition from the on-state to the off-state. This ensures that the voltage across the device stays within safe levels and prevents stress on the device.The NGTB20N60L2TF1G is also designed for fault protection. It includes an integrated over-current protection feature which shut off the device if the temperature of the device exceeds a preset temperature. It also has a remote shutdown feature that can be activated in the event of a fault or overload.In conclusion, the NGTB20N60L2TF1G is a high power, high speed, four-terminal IGBT switch designed specifically for industrial motor control, AC/DC power conversion, UPS, lighting control and renewable energy systems. It is designed for ease of use, with features such as fast switching, low-side gate drive circuit, integrated over-current protection, and remote shutdown.
The specific data is subject to PDF, and the above content is for reference
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